Dongbu Electronics, Co. Ltd.

Skhynix Inc.

Lg Display Co., Ltd.

Dongbu Hitek Co., Ltd.

Lg Electronics Inc.

Cj Cheiljedang Corporation

Anam Semiconductor Inc.

Entrix Co., Ltd.

Cj Wellcare Corporation

Sang Bum Lee

Sang Hyun Oh

Seung Won Park

Sun Mi Park

Seiichi Aritome

Jin Hyo Jung

Tae Meon Bae

Se Jun Kim

Sung Do Kwon

Seong Jun Cho

Sung Hee Park

Taek Beom Kim

Yun Sik Kim

Jung Gyu Park

Young Ho Hong

Sung Wook Han

Soon Ok Seo

Min Ju Park

Jae Ho Jang

Ji Hyun Kang

Sang Woo Rhie

Mi Jung Kim

Ah Jin Kim

Su Jin Heo

Hyun Sig Na

Tae Joo Yang

Yunjeong Lee

Mijung Kim

Yun Jeong Lee

Tai Joon Kim

The present technology includes a semiconductor memory device and a method of manufacturing the same. The semiconductor memory device includes a first semiconductor layer, a cell stack and a peripheral stack each disposed on the first semiconductor layer, a first slit structure extending in a first direction and penetrating the cell stack and the peripheral stack, a penetration structure penetrating the peripheral stack and being spaced apart from the first slit structure, and a support structure penetrating the peripheral stack. The support structure includes first sidewall portions spaced apart from each other and a second sidewall portion connecting the first sidewall portions to each other, and the penetration structure is disposed between the first sidewall portions.

Semiconductor memory device and method of manufacturing the same

Disclosed are a novel strain of, a method of producing fermented grains using the strain, fermented grains produced using the strain, and a composition for thrombolysis; digestion improvement; prophylaxis, amelioration or treatment of bowel inflammation, serous membrane weakening or intestinal injury; or antioxidation, comprising the fermented grains.

Strain derived from traditional fermented food and having excellent enzyme productivity, and method for preparing fermented cereal enzyme food by using same

A semiconductor memory device, and a method of operating the semiconductor memory device, includes a memory cell array including a plurality of normal memory blocks and at least one system block, and a peripheral circuit configured to perform a program operation, a read operation, or an erase operation on the plurality of normal memory blocks or the at least one system block, wherein a data storage capacity of the at least one system block is less than a data storage capacity of each of the plurality of normal memory blocks.

Semiconductor memory device including system block for system data and method of operating the same

The present invention relates to a jam mix composition for microwave cooking, the composition comprising fats and oils; jam using the same; and a method for preparing the same. The jam mix composition of the present invention has advantages in that the convenience for jam cooking is enhanced, a jam production time is shortened, the freshness and texture of fruits or vegetables are maintained, and destruction of nutrients can be minimized.

Jam mix composition for microwave cooking, jam using same, and method for preparing same

A system for providing a cloud streaming-based service menu, a method and a terminal device. The terminal device selects a particular step in a step-by-step service menu to make a request for driving a content and the service device, in response to the request, provides content access information and menu step information corresponding to the particular step selected and initializes a step in the step-by-step service menu provided to the terminal device for switching a state of the service menu to a state in which an additional access of another terminal device is possible, so as to provide the initialized step-by-step service menu to another initially accessed terminal device. When the terminal device re-accesses, the service device will provide the service menu of the particular step corresponding to the menu step information to another accessed terminal device.

System for providing cloud streaming-based service menu and method for same

A method of manufacturing a semiconductor device includes forming on a lower structure, a first stack structure in which first material layers and second material layers are alternately stacked, forming, on the first stack structure, a second stack structure in which third material layers and fourth material layers are alternately stacked, forming preliminary holes penetrating the second stack structure, forming a fifth material layer covering the preliminary holes on the second stack structure to define a first air-gap inside the preliminary holes, and forming through holes connected to the preliminary holes by penetrating from the fifth material layer overlapping the preliminary holes to the first stack structure.

Manufacturing method of semiconductor device

A semiconductor apparatus according to an embodiment may include a first pipe gate divided by an isolation layer, a first pipe channel layer buried in the first pipe gate, a second pipe gate covering the first pipe channel layer, the first pipe gate and the isolation layer and a second pipe channel layer buried in the second pipe gate.

Semiconductor apparatus and manufacturing method of the same

The semiconductor device includes a vertical channel layer formed on a substrate; conductive layer patterns and insulating layer patterns alternately formed around a length of each of the vertical channel layer; and a charge storing layer pattern formed between each of the vertical channel layers and the conductive layer patterns, where each of the charge storing layer patterns is isolated by the insulating layer patterns.

Semiconductor device, memory system including the same, and method of manufacturing the same

A three-dimensional (3-D) nonvolatile memory device includes a channel layer protruded from a substrate, a plurality of memory cells stacked along the channel layer, a source line coupled to the end of one side of the channel layer, a bit line coupled to the end of the other side of the channel layer, a first junction interposed between the end of one side of the channel layer and the source line and configured to have a P type impurity doped therein, and a second junction interposed between the end of the other side of the channel layer and the bit line and configured to have an N type impurity doped therein.

3-D nonvolatile memory devices and methods of manufacturing the same

A capacitor of a semiconductor device includes a capacitor structure configured to include electrode layers and dielectric layers alternately stacked, edge regions each stepwise patterned, and a central region disposed between the edge regions, sacrificial layers disposed within the respective electrode layers in the edge regions of the capacitor structure, and support plugs formed in the central region of the capacitor structure and configured to penetrate the electrode layers and the dielectric layers.

Capacitor and register of semiconductor device, memory system including the semiconductor device, and method of manufacturing the semiconductor device

A semiconductor memory device includes a plurality of memory blocks formed over a substrate including source regions and separated from each other by a slit, a plurality of bit lines coupled to the strings of the memory blocks and disposed over the memory blocks, and source contact lines formed within the slits, coupled to the source regions, respectively, and disposed in a direction to cross the plurality of bit lines.

A backlight assembly for a liquid crystal display includes: one U-shaped lamp; a lamp housing including the lamp; a side supporter fastened to the lamp housing and including an inserting part where the lamp is inserted; and a lamp support member that supports and fixes the lamp within the inserting part of the side supporter.

Backlight assembly for liquid crystal display

Growing community of inventors

Incheon, South Korea

Sang Bum Lee