Samsung Electronics Co., Ltd.

Sang-Bong Bang

Jung-hyun Lee

Sang-Jun Choi

Chang-soo Lee

Bum-seok Seo

A storage node, a method of fabricating the same, a semiconductor memory device and a method of fabricating the same is provided. The method of fabricating a storage node may include forming a lower electrode, forming an irradiated data storage layer and forming an upper electrode.

Method of fabricating a storage node

Provided is an insulation layer patterning method employing a flowable oxide, which does not use a photo-resist. Also, an insulation layer pattern and display devices including the insulation layer are disclosed.

Insulating layer patterning method, insulating layer formed by the insulating layer patterning method, display device having the insulating layer

A conductive carbon nanotube tip and a manufacturing method thereof are provided. The conductive carbon nanotube tip includes a carbon nanotube tip substantially vertically placed on a substrate, and a ruthenium coating layer covering a surface of the carbon nanotube tip and extending to at least a part of the substrate. The manufacturing method includes substantially vertically placing a carbon nanotube tip on a substrate, and forming a ruthenium coating layer on the carbon nanotube tip and at least a part of the substrate.

Conductive carbon nanotube tip, probe having the conductive carbon nanotube tip, and method of manufacturing the conductive carbon nanotube tip

Provided are methods for manufacturing silicon rich oxide (SRO) layers useful in the fabrication of semiconductor devices, for example, non-volatile memory devices, and methods for fabricating semiconductor devices incorporating such SRO layers. The methods include absorbing a first silicon source gas onto the substrate, oxidizing the first absorbed layer to form a silicon oxide layer, absorbing a second silicon source gas onto the substrate and reducing the second absorbed layer to form a silicon layer. The combination of the silicon oxide layer(s) and the silicon layer(s) comprise, in turn, a composite SRO layer. These manufacturing methods facilitate control of the oxygen concentration in the SRO, the relative thicknesses of the silicon oxide and silicon layers, and provides improved step coverage, thus allowing the manufacturing of high quality semiconductor devices.

Growing community of inventors

Yongin-si, South Korea

Sang-Bong Bang