Menlo Industries, Inc.

Sanehiko Kakihana

Chung-Yi Su

Domingo A Figueredo

A tunnel diode is disclosed having a highly P-doped layer of indium gallium arsenide formed on a highly N-doped layer of indium gallium arsenide which is supported on a semi-insulating substrate of indium phosphide. In an alternative embodiment, a tunnel diode is disclosed which has a highly P-doped layer of indium gallium arsenide formed on a highly N-doped layer of indium gallium arsenide which is supported on an N-doped substrate.

Tunnel diode detector for microwave frequency applications

Disclosed is a process for producing a monolithic microwave integrated circuit device utilizing a body having a first thickness in the heat producing region and a second thickness in the region adjacent to the microstrip transmission lines.

Process for producing an integrated circuit device with substrate via

Disclosed is a tunable circuit for an integrated circuit device and a process for making such circuit.

On-chip tuning for integrated circuit using heat responsive element

Disclosed is a process for attaching a die to a package, which process utilizes a heat cycle in conjunction with a vacuum in the attachment process.

Die attachment process

Disclosed is a process for producing a field effect transistor to provide a uniformity of spacing between the gate and drain as well as the gate and source.

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San Francisco, CA, United States of America

Sanehiko Kakihana