Stmicroelectronics (Crolles 2) Sas

STMicroelectronics

Commissariat a L'energie Atomique Et Aux Energies Alternatives

Socpra Sciences Et Genie S.e.c.

Centre National De La Recherche Scientifique

Stmicroelectronics (Grenoble 2) Sas

Stmicroelectronics (Research & Development) Limited

Institut National Polytechnique De Grenoble

Stmicroelectronics (Rousset) Sas

Sandrine Lhostis

Salim Boutami

Romain Girard Desprolet

Michel Marty

Luc Guy Frechette

Veronique Sousa

Olga Kokshagina

Jean-Francois Nodin

Louis-Michel Collin

Philippe Coronel

Stephane Monfray

Pascal Ancey

Laurent-Luc Chapelon

Catherine Anne Dubourdieu

Olivier Le Briz

Adam Caley

Vincent Fiori

Christophe Maitre

Daniel-Camille Bensahel

Vincent Cosnier

Pierre-Jean Parodi-Keravec

Yann Beilliard

Erwan Yann Rauwel

A spectral filter is manufactured using a process wherein a first rectangular bar is formed within a first layer made of a first material, said first rectangular bar being made of a second material having a different optical index. The process further includes, in a second layer over the first layer, a second rectangular bar made of the second material. The second rectangular bar is positioned in contact with the first rectangular bar. The second layer is also made of the first material.

Method of manufacturing a nanostructured spectral filter

An assembly includes an integrated circuit chip and a plate with at least one heat removal channel arranged between the chip and the plate. Metal sidewalls are formed to extend from one surface of the chip to an opposite surface of the plate. The assembly is encapsulated in a body that includes an opening extending to reach the channel. The plate may be one of an interposer, an integrated circuit chip, a support of surface-mount type, or a metal plate.

Assembly of an integrated circuit chip and of a plate

An infrared high-pass plasmonic filter includes a copper layer interposed between two layers of a dielectric material. An array of patterned openings extend through the copper layer and are filled with the dielectric material. Each patterned opening is in the shape of a greek cross, with the arms of adjacent patterns being collinear. A ratio of the width to the length of each arm is in the range from 0.3 to 0.6, and the distance separating the opposite ends of arms of adjacent patterns is shorter than 10 nm.

Plasmonic filter

A spectral filter includes an assembly of filtering cells. Each cell has a same nanostructured pattern and a preferential direction of the pattern. This preferential direction is, for each cell, oriented approximately radially with respect to a single point of the spectral filter. Alternatively, this preferential direction is, for each cell, oriented approximately ortho-radially with respect to the single point of the spectral filter. The single point may be a center point. Alternatively, the single point may correspond to an optical axis of a lens element associated with the spectral filter.

Forming of a nanostructured spectral filter

An integrated circuit chip cooling device includes a network of micropipes. A first pipe portion and a second pipe portion of the network are connected by at least one valve. The valve is formed of a bilayer strip. In response to change in temperature, the shape of the bilayer strip changes to move the valve from a substantially closed position to an open position. In one configuration, the change is irreversible. In another configuration, the change is reversible in response to an opposite change in temperature.

Integrated circuit chip cooling device

An assembly is made of an integrated circuit chip and a plate. At least one channel is arranged between the chip and the plate. The channel is delimited by metal sidewalls at least partially extending from one surface of the chip to an opposite surface of the plate. The assembly is encapsulated in a body that includes an opening extending to reach the channel. The plate may be one of an interposer, an integrated circuit chip, a support of surface-mount type, or a metal plate.

A proximity sensor includes a radiation source configured to emit a primary radiation beam and a primary detector configured to pick up a reflected primary radiation beam. The radiation source is further configured to emit stray radiation. The sensor further includes a reference detector arranged to receive the stray radiation. The stray radiation may, for example, be emitted from either a side of the radiation source or a bottom of the radiation source.

Proximity sensor including reference detector for stray radiation detection

An integrated structure includes a support supporting at least one chip and a heat dissipating housing, attached to the chip. The housing is thermally conductive and has a thermal expansion compatible with the chip. The housing may further including closed cavities filled with a phase change material.

Integrated structure with improved heat dissipation

A device includes a support, a three-dimensional integrated structure above the support, and a lateral encapsulation region arranged around the structure. The lateral encapsulation region includes first channels configured to make it possible to circulate a cooling fluid.

Device comprising a three-dimensional integrated structure with simplified thermal dissipation, and corresponding fabrication method

An integrated imaging device supports front face illumination with one or more photosensitive regions formed in a substrate. A lower dielectric region is provided over the substrate, the lower dielectric region having an upper face. A metal optical filter having a metal pattern is provided on the upper face (or extending into the lower dielectric region from the upper face). An upper dielectric region is provided on top of the lower dielectric region and metal optical filter. The lower dielectric region is at least part of a pre-metal dielectric layer, and the upper dielectric region is at least part of a metallization layer.

Method for producing an integrated imaging device with front face illumination comprising at least one metal optical filter, and corresponding device

A memory cell including a via made of a phase-change material arranged between a lower electrode and an upper electrode, wherein the via includes a central region laterally surrounded with a peripheral region, the crystallization and melting temperatures of the central region being respectively lower than those of the peripheral region.

Phase-change memory cell

A memory cell including a via made of a phase-change material arranged between a lower electrode and an upper electrode, wherein the via includes a first region adjacent to a second region itself adjacent to at least one third region, the first, second, and third regions each extending from the upper electrode to the lower electrode, the crystallization temperature of the second region ranging between that of the first region and that of the third region, and the melting temperatures of the first, second, and third regions being substantially identical.

An integrated electronic circuit has a thin layer portion based on hafnium oxide. This portion additionally contains magnesium atoms, so that the portion is in the form of a hafnium-and-magnesium mixed oxide. Such a portion has a high dielectric constant and a very low leakage current. It is particularly suitable for forming a part of a gate insulation layer of a MOS transistor or a part of a MIM capacitor dielectric.

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Theys, France

Sandrine Lhostis