Crystal Is, Inc.

Sandra B Schujman

Glen Alfred Slack

Leo J Schowalter

Robert T Bondokov

Kenneth E Morgan

Shailaja P Rao

In various embodiments, methods of forming single-crystal AlN include providing a substantially undoped polycrystalline AlN ceramic having an oxygen concentration less than approximately 100 ppm, forming a single-crystal bulk AlN crystal by a sublimation-recondensation process at a temperature greater than approximately 2000&#xb0; C., and cooling the bulk AlN crystal to a first temperature between approximately 1500&#xb0; C. and approximately 1800&#xb0; C. at a first rate less than approximately 250&#xb0; C./hour.

Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them

Aluminum nitride bulk crystals having high transparency to untraviolet light and methods of forming them

In accordance with various embodiments, crystalline structures are formed by providing, at a growth temperature, a liquid comprising AlN and having a quality factor greater than approximately 0.14 and forming solid AlN from the liquid, the growth temperature being lower than the melting point of AlN.

Deep-eutectic melt growth of nitride crystals

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Niskayuna, NY, United States of America

Sandra B Schujman