Intermolecular, Inc.

University of California

Sandip Niyogi

Chi-I Lang

Sean Barstow

Ratsamee Limdulpaiboon

J Watanabe

Tony P Chiang

Dipankar Pramanik

Sunil Shanker

Jinhong Tong

Frank Greer

Amol Ramesh Joshi

Robert Cort Haddon

Shouqian Shao

Edwin Adhiprakasha

Elena Borisova Bekyarova

Salil Mujumdar

Chi-l Lang

Mikhail Efimovich Itkis

Kurt Pang

Xiaojuan Tian

Feihu Wang

Santanu Sarkar

A method of modifying a carbon material is disclosed. The method comprises: bonding a metal to a carbon material to form a metal-carbon complex comprising the metal and a benzene unit, wherein the carbon material comprises extended sp-bonded carbon atoms.

Organometallic chemistry of extended periodic II-electron systems

Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The remote plasma source may be used to provide a plasma surface treatment or as a source to incorporate dopants into a pre-deposited layer.

Method to control depth profiles of dopants using a remote plasma source

Metal gate high-k capacitor structures with lithography patterning are used to extract gate work function using a combinatorial workflow. Oxide terracing, together with high productivity combinatorial process flow for metal deposition can provide optimum high-k gate dielectric and metal gate solutions for high performance logic transistors. Surface treatments can be inserted at three possible steps during the formation of the MOSCAP structures. The high productivity combinatorial technique can provide an evaluation of effective work function for given high-k dielectric metal gate stacks for PMOS and NMOS transistors, which is critical in identifying and selecting the right materials.

Methods to characterize an embedded interface of a CMOS gate stack

Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The plasma system may be used to generate activated hydrogen species. The activated hydrogen species can be used to etch/clean semiconductor oxide surfaces such as silicon oxide or germanium oxide.

Hydrogen plasma cleaning of germanium oxide surfaces

Embodiments described herein provide interconnect barrier layers and methods for forming such barriers. A dielectric body having a trench formed in a surface thereof is provided. A first layer is formed above the dielectric body within the trench. The first layer includes amorphous carbon. A second layer is formed above the first layer. The second layer includes a metal. The dielectric body, the first layer, and the second layer are heated to convert at least some of the amorphous carbon to graphene.

Graphene barrier layers for interconnects and methods for forming the same

A germanium-containing semiconductor surface is prepared for formation of a dielectric overlayer (e.g., a thin layer of high-k gate dielectric) by (1) removal of native oxide, for example by wet cleaning, (2) additional cleaning with hydrogen species, (3) in-situ formation of a controlled monolayer of GeO, and (4) in-situ deposition of the dielectric overlayer to prevent uncontrolled regrowth of native oxide. The monolayer of GeOpromotes uniform nucleation of the dielectric overlayer, but it too thin to appreciably impact the effective oxide thickness of the dielectric overlayer.

Nucleation interface for high-k layer on germanium

Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber, a remote plasma source, and a showerhead. Inert gas ports within the showerhead assembly can be used to alter the concentration and energy of reactive radical or reactive neutral species generated by the remote plasma source in different regions of the showerhead. This allows the showerhead to be used to apply a surface treatment to different regions of the surface of a substrate. Varying parameters such as the remote plasma parameters, the inert gas flows, pressure, and the like allow different regions of the substrate to be treated in a combinatorial manner.

Combinatorial processing using a remote plasma source

Methods and apparatuses for combinatorial processing are disclosed. Methods include introducing a substrate into a processing chamber. Methods further include forming a first film on a surface of a first site-isolated region on the substrate and forming a second film on a surface of a second site-isolated region on the substrate. The methods further include exposing the first film to a plasma having a first source gas to form a first treated film on the substrate and exposing the second film to a plasma having a second source gas to form a second treated film on the substrate without etching the first treated film in the processing chamber. In addition, methods include evaluating results of the treated films post processing.

Method and apparatus for high-K gate performance improvement and combinatorial processing

Embodiments provided herein describe methods and systems for processing substrates. A plasma including radical species and charged species is generated. The charged species of the plasma are collected. A substrate is exposed to the radical species of the plasma. A layer is formed on the substrate after exposing the substrate to the radical species.

Surface treatment methods and systems for substrate processing

A method for depositing graphene is provided. The method includes depositing a layer of non-conducting amorphous carbon over a surface of a substrate and depositing a transition metal in a pattern over the amorphous carbon. The substrate is annealed at a temperature below 500&#xb0; C., where the annealing converts the non-conducting amorphous carbon disposed under the transition metal to conducting amorphous carbon. A portion of the pattern of the transition metal is removed from the surface of the substrate to expose the conducting amorphous carbon.

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San Jose, CA, United States of America

Sandip Niyogi