Iowa State University Research Foundation, Inc.

Polarfab, LLC

Sandhya Gupta

Mihail Sigalas

Kai-Ming Ho

Jonathan Scott McCalmont

John Charles Beckman

Gary L Tuttle

Steve Kosier

An integrated circuit having very low parasitic current gain includes a guard ring that is used to completely surround a device, such as a power device, that induces parasitic current. The guard ring is formed in a semiconductor body layer such as an epitaxial layer and has a central guard ring of the same type conductivity as that of the body layer and additional flanking rings of the opposite type conductivity. An unbiased configuration of the guard ring based on the above structure is particularly effective in reducing the parasitic gain. The effectiveness of the guard ring, such as the high current performance, is further improved by reducing the resistance between neighboring rings using various methods.

Guard ring structure for reducing crosstalk and latch-up in integrated circuits

A method of manufacturing a flexible metallic photonic band gap structure operable in the infrared region, comprises the steps of spinning on a first layer of dielectric on a GaAs substrate, imidizing this first layer of dielectric, forming a first metal pattern on this first layer of dielectric, spinning on and imidizing a second layer of dielectric, and then removing the GaAs substrate. This method results in a flexible metallic photonic band gap structure operable with various filter characteristics in the infrared region. This method may be used to construct multi-layer flexible metallic photonic band gap structures. Metal grid defects and dielectric separation layer thicknesses are adjusted to control filter parameters.

Method of manufacturing flexible metallic photonic band gap structures, and structures resulting therefrom

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Bloomington, MN, United States of America

Sandhya Gupta