Globalfoundries Inc.

Sandhya Chandrashekhar

Ralf Richter

Sven Beyer

Zhi-Yuan Wu

Stefan Duenkel

Jochen Willi Poth

In sophisticated SOI transistor elements, the buried insulating layer may be specifically engineered so as to include non-standard dielectric materials. For instance, a charge-trapping material and/or a high-k dielectric material and/or a ferroelectric material may be incorporated into the buried insulating layer. In this manner, non-volatile storage transistor elements with superior performance may be obtained and/or efficiency of a back-bias mechanism may be improved.

Growing community of inventors

San Jose, CA, United States of America

Sandhya Chandrashekhar