Asml Netherlands B.v.

Koninklijke Philips Corporation N.v.

Sander Frederik Wuister

Yvonne Wendela Kruijt-Stegeman

Johan Frederik Dijksman

Roelof Koole

Ivar Schram

Emiel Peeters

Andre Bernardus Jeunink

Vadim Yevgenyevich Banine

Jeroen Herman Lammers

Arie Jeffrey Den Boef

Michael Jozef Mathijs Renkens

Aleksey Yurievich Kolesnychenko

Christianus Martinus Van Heesch

Anke Pierik

Toon Hardeman

Klaus Simon

Raymond Wilhelmus Louis Lafarre

Jozef Maria Finders

Karel Diederick Van Der Mast

Johannes Petrus Martinus Bernardus Vermeulen

Harmeet Singh

Scott Anderson Middlebrooks

Martinus Bernardus Van Der Mark

Andrei Mikhailovich Yakunin

Adrianus Hendrik Koevoets

Erik Roelof Loopstra

Rifat Ata Mustafa Hikmet

Ties Van Bommel

Helmar Van Santen

Pieter Willem Herman De Jager

Johan Hendrik Klootwijk

Marcus Antonius Verschuuren

Johannes Onvlee

Mircea Dusa

Lucas Henricus Johannes Stevens

Vladimir Mihailovitch Krivtsun

Vladimir Mikhailovich Krivtsun

Catharinus De Schiffart

Norbert Erwin Therenzo Jansen

Gerard Van Schothorst

Krassimir Todorov Krastev

George Arie Jan De Fockert

Gregor Edward Van Baars

Tamara Druzhinina

Wilhelmus Sebastianus Marcus Maria Ketelaars

Henri Marie Joseph Boots

Martin Maurice Vernhout

Raymond Jacobus Knaapen

Raymond Jacobus Wilhelmus Knaapen

Aurelie Marie Andree Brizard

Richard Joseph Marinus Schroeders

Oktay Yildirim

Davide Ambesi

Thanh Trung Nguyen

Alexey Olegovich Polyakov

Gijsbert Rispens

Antonius Johannes Joseph Wismans

Marleen Kooiman

Chrysostomos Batistakis

Bart Laenens

Eddy Cornelis Antonius Van Der Heijden

Jacobus Bernardus Giesbers

Ruediger Mauczok

Carolus Johannes Catharina Schoormans

Luigi Scaccabarozzi

Leendert Van Der Tempel

Denis Alexandrovich Glushkov

Hermanus Adrianus Dillen

Emile Johannes Karel Verstegen

Nikolay Nikolaevich Iosad

Thomas Jarik Huisman

Hieronymus Johannus Christiaan Meessen

Dorothea Maria Christina Oorschot

Pascal Antonius Smits

Emiel Andreas Godefridus Peeters

Tatyana Viktorovna Rakhimova

Dmitriy Viktorovich Lopaev

David Marie Rio

Jessica Margaretha De Ruiter

Jan Van Male

Joanne Klein-Wolterink

Cornelis Mutsaers

An imprint lithography apparatus having a first frame to be mounted on a floor, a second frame mounted on the first frame via a kinematic coupling, an alignment sensor mounted on the second frame, to align an imprint lithography template arrangement with a target portion of a substrate, and a position sensor to measure a position of the imprint lithography template arrangement and/or a substrate stage relative to the second frame.

Imprint lithography

A method for calibrating a resist model. The method includes: generating a modeled resist contour of a resist structure based on a simulated aerial image of the resist structure and parameters of the resist model, and predicting a metrology contour of the resist structure from the modeled resist contour based on information of an actual resist structure obtained by a metrology device. The method includes adjusting one or more of the parameters of the resist model based on a comparison of the predicted metrology contour and an actual metrology contour of the actual resist structure obtained by the metrology device.

Systems and methods for reducing resist model prediction errors

A method involving obtaining a resist deformation model for simulating a deformation process of a pattern in resist, the resist deformation model being a fluid dynamics model configured to simulate an intrafluid force acting on the resist, performing, using the resist deformation model, a computer simulation of the deformation process to obtain a deformation of the developed resist pattern for an input pattern to the resist deformation model, and producing electronic data representing the deformation of the developed resist pattern for the input pattern.

Systems and methods for predicting layer deformation

Apparatuses, systems, and methods for inspecting a semiconductor sample are disclosed. In some embodiments, the sample may comprise a structure having a plurality of openings in a top layer of the structure. In some embodiments, the method may comprise generating an image of the structure using a SEM; inspecting an opening of the plurality of openings by determining a dimension of the opening based on the image and determining an open-state of the opening, based on a contrast of the image; and determining a quality of the opening based on both the determined dimension and the determined open-state of the opening.

Inspection tool and inspection method

A resist composition is disclosed which comprises a perovskite material with a structure having a chemical formula selected from ABX, ABX, or ABX, wherein A is a compound containing an NHgroup, B is a metal and X is a halide constituent. The perovskite material may comprise one or more of the following components: halogen-mixed perovskite material; metal-mixed perovskite material, and organic ligand mixed perovskite material.

Lithographic patterning process and resists to use therein

A method of predicting the dominant failure mode and/or the failure rate of a plurality of features formed on a substrate, and an associated inspection apparatus. The method may include determining a placement metric for each feature, the placement metric including a measure of whether the feature is in an expected position, and comparing a distribution of the placement metric to a reference (e.g., Gaussian) distribution. The placement metric may include a boundary metric for a plurality of boundary points on a boundary defining each feature, the boundary metric including a measure of whether a boundary point is in an expected position. The dominant failure mode and/or the failure rate of the plurality of features is predicted from the comparison.

Method for controlling a manufacturing apparatus and associated apparatuses

A method of design or verification for a self-assemblable block copolymer feature, the block copolymer feature including a first domain having a first polymer type and a second domain having a second polymer type, the method including, based on the length of the second polymer type or on an uncertainty in position of the first domain within the block copolymer feature calculated based on the length of the second polymer type, adjusting a parameter of the self-assembly process of a block copolymer feature or verifying a placement of a block copolymer feature.

Method of designing lithography features by self-assembly of block copolymer

An imprint lithography apparatus is disclosed that includes an imprint template holder arranged to hold an imprint template, and a plurality of position sensors configured to measure change of the size and/or shape of the imprint template, wherein the position sensors are mechanically isolated from the imprint template. Also disclosed is a lithography method that includes using an imprint template to imprint a pattern onto a substrate, and measuring changes of the size and/or shape of the imprint template while imprinting the pattern onto the substrate.

Imprint lithography apparatus and method

An imprint lithography apparatus is disclosed that includes a support structure configured to hold an imprint template. The apparatus further includes an actuator located between the support structure and a side of the imprint template, when the imprint template is held by the support structure, configured to apply a force to the imprint template and a force sensor between the support structure and a side of the imprint template, when the imprint template is held by the support structure.

A method of designing a feature guiding template for guiding self-assembly of block copolymer to form at least two features in a design layout for lithography, the feature guiding template including at least two portions joined by a bottleneck, the method including determining a characteristic of the feature guiding template based on at least a function of geometry of the feature guiding template including a value of a first width of at least one of the portions, a value of a second width of the bottleneck, or a value based on both the first width and the second width.

Methodology to generate a guiding template for directed self-assembly

A method of designing an epitaxy template to direct self-assembly of a block copolymer on a substrate into an ordered target pattern involves providing a primary epitaxy template design and then varying the design to optimize a pattern fidelity statistic, such as placement error, relative to the target pattern by modelling predicted self-assembled block copolymer patterns and optimizing pattern placement as a function of a varied design parameter. In addition to varying a design parameter to optimize the pattern fidelity statistic, a random error in the template design is included prior to modelling predicted patterns in order to compensate for expected template inaccuracy in practice. The inclusion of a realistic random error in the template design, in addition to systematic variation of a design parameter, may improve the template design optimization to render the result less sensitive to error which may be inevitable in practice.

Methods for providing lithography features on a substrate by self-assembly of block copolymers

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Eindhoven, Netherlands

Sander Frederik Wuister