Infineon Technologies Ag

Sandeep Walia

Dethard Peters

Tomas Manuel Reiter

Frank Wolter

Sascha Axel Baier

Hans-Joachim Schulze

Werner Schustereder

Helmut Oefner

A semiconductor die includes: a SiC substrate; power and current sense transistors integrated in the substrate such that the current sense transistor mirrors current flow in the main power transistor; a gate terminal electrically connected to gate electrodes of both transistors; a drain terminal electrically connected to a drain region in the substrate and which is common to both transistors; a source terminal electrically connected to source regions of the power transistor; a dual mode sense terminal; and a doped resistor region in the substrate between the transistors. The dual mode sense terminal is electrically connected to source regions of the current sense transistor. The doped resistor region has an opposite conductivity type as the source regions of both transistors and is configured as a temperature sense resistor that electrically connects the source terminal to the dual mode sense terminal.

Dual mode current and temperature sensing for SiC devices

A semiconductor die includes: a SiC substrate; power and current sense transistors integrated in the substrate such that the current sense transistor mirrors current flow in the main power transistor; a gate terminal electrically connected to gate electrodes of both transistors; a drain terminal electrically connected to a drain region in the substrate and which is common to both transistors; a source terminal electrically connected to source and body regions of the power transistor; a dual mode sense terminal; and a doped resistor region in the substrate between the transistors. The dual mode sense terminal is electrically connected to source and body regions of the current sense transistor. The doped resistor region has a same conductivity type as the body regions of both transistors and is configured as a temperature sense resistor that electrically connects the source terminal to the dual mode sense terminal.

SiC device having a dual mode sense terminal, electronic systems for current and temperature sensing, and methods of current and temperature sensing

Disclosed is a method for processing a semiconductor wafer. The method includes forming an oxygen containing region in the semiconductor wafer, wherein forming the oxygen containing region includes introducing oxygen via a first surface into the semiconductor wafer. The method further includes creating vacancies at least in the oxygen containing region and annealing at least the oxygen containing region in an annealing process so as to form oxygen precipitates.

Method for processing a silicon wafer

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Villach, Austria

Sandeep Walia