Micron Technology Incorporated

Sandeep Reddy Kadasani

Scott Anthony Stoller

Niccolo' Righetti

Pitamber Shukla

Chi Ming Chu

A set of threshold voltage distribution width measurements are obtained for a block in a memory device. An endurance estimate is determined for the block based on the threshold voltage distribution width measurements. The endurance estimate comprises an indication of an estimated number of program/erase cycles during which data can be reliably stored by the block. One or more parameters of the block are managed based on the endurance estimate.

Dynamic block categorization to improve reliability and performance in memory sub-system

A read operation is performed on a memory device in accordance with a pass-through voltage setting that defines a pass-through voltage applied to one or more cells of the memory device during read operations. A number of zero bits read from the memory device based on the read operation are counted and compared with a threshold value. Based on the number of zero bits exceeding the threshold value, the pass-through voltage is increased by adjusting the pass-through voltage setting.

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Meridian, ID, United States of America

Sandeep Reddy Kadasani