Taiwan Semiconductor Manufacturing Comp. Ltd.

TSMC Nanjing Company, Limited

Nxp B.v.

Koninklijke Philips Corporation N.v.

Sandeep Kumar Goel

Yun-Han Lee

Kai-Yuan Ting

Ashok Mehta

Stanley John

Ankita Patidar

Tze-Chiang Huang

Chao-Yang Yeh

Mei Hsu Wong

Mill-Jer Wang

Saman M I Adham

Ji-Jan Chen

Chin-Chou Liu

Ching-Fang Chen

Shereef Shehata

Yen-Hao Huang

Chung-Sheng Yuan

Marat Gershoig

Ravi Venugopalan

Hung-Chih Lin

Hsin-Cheng Chen

Mark Semmelmeyer

Haohua Zhou

Yi-Lin Chuang

Jose De Jesus Pineda De Gyvez

Yung-Chin Hou

Hubertus Gerardus Hendrikus Vermeulen

Wei-Pin Changchien

Erik Jan Marinissen

Andre Krijn Nieuwland

Saurabh Gupta

Rinze I M P Meijer

Charlie Zhou

Tom Chen

Hendrikus P E Vranken

Yuan-Han Lee

Hubertus G H Vermuelen

Vinay Kotha

Cheng-Pin Chiu

Charles C C Liu

Anshuman Chandra

Saman Mi Adham

Abhishek Koneru

Tri Ngo

Zipeng Li

In one embodiment, a device comprises: a first die having disposed thereon a first plurality of latches wherein ones of the first plurality of latches are operatively connected to an adjacent one of the first plurality of latches; and a second die having disposed thereon a second plurality of latches wherein ones of the second plurality of latches are operatively connected to an adjacent one of the second plurality of latches. Each latch of the first plurality of latches on said first die corresponds to a latch in the second plurality of latches on said second die. Each set of corresponding latches are operatively connected. A scan path comprises a closed loop comprising each of said first and second plurality of latches. One of the second plurality of latches is operatively connected to another one of the second plurality of latches via an inverter.

Scan architecture for interconnect testing in 3D integrated circuits

A network-on-chip (NoC) system includes a default communication path between a master device and a slave device, and a backup communication path between the master device and the slave device. The default communication path is configured to work in a normal operation state of the chip. The backup communication path is configured to replace the default communication path when a fault arises in the default communication path.

Network-on-chip system and a method of generating the same

A semiconductor device includes an on-chip clock controller configured to provide a clock output signal and configured to receive a mode signal and a speed enable signal, and to generate a first fast clock enable signal and a first slow clock enable signal. The on-chip clock controller is configured to override the first fast clock enable signal based on the mode signal and the speed enable signal to provide a fast clock in the clock output signal and to override the first slow clock enable signal based on the mode signal and the speed enable signal to provide a slow clock in the clock output signal.

Circuit and methodology for power profile

Electronic system level (ESL) design and verification of the present disclosure is utilized to provide an electronic simulation and modeling of function safety and fault management of an electronic device. A method for simulating a safety circuit includes providing an electronic architectural design to perform one or more functional behaviors of the electronic device in accordance with an electronic design specification. The method further includes modeling the safety circuit of the electronic architectural design and one or more other electronic circuits of the electronic architectural design that communicate with the safety circuit. The method further includes simulating, using the modeling, operation of the safety circuit while the electronic architectural design is performing the one or more functional behaviors. The method also includes determining whether the simulated operation of the safety circuit satisfies the electronic design specification.

Function safety and fault management modeling at electrical system level (ESL)

Systems, methods, and devices are described herein for performing intra-die and inter-die tests of one or more dies of an integrated circuit. A cell of an integrated circuit includes a data register, an I/O pad, and a first multiplexer. The data register is configured to output a signal. The I/O pad is coupled to the data register and configured to receive and buffer the signal. The first multiplexer is coupled to the I/O pad and the data register. The multiplexer is configured to selectively output either the buffered signal or the signal based on whether a scan mode or a functional mode is enabled.

Wrapper cell design and built-in self-test architecture for 3DIC test and diagnosis

A method of identifying cell-internal defects: obtaining a circuit design of an integrated circuit, the circuit design including netlists of one or more cells coupled to one another; identifying the netlist corresponding to one of the one or more cells; injecting a defect to one of a plurality of circuit elements and one or more interconnects of the cell; retrieving a first current waveform at a location of the cell where the defect is injected by applying excitations to inputs of the cell; retrieving, without the defect injected, a second current waveform at the location of the cell by applying the same excitations to the inputs of the cell; and selectively annotating, based on the first current waveform and the second current waveform, an input/output table of the cell with the defect.

Systems and methods to detect cell-internal defects

A device includes a first memory circuit and a processing circuit. The first memory circuit is configured to store first hash data. The processing circuit is coupled to the first memory circuit. The processing circuit is configured to: at least based on a volume of the device, define a size of a distinguishable identification (ID) and a size of second hash data; based on a combination of at least one bit of each of the distinguishable ID and IDs of the device, generate the second hash data; and compare the first hash data with the second hash data, in order to identify whether the device is tampered. A method is also discloses herein.

Device with self-authentication

A method executed at least partially by a processor includes creating a plurality of groups of paths from a plurality of paths in an integrated circuit (IC) layout diagram. Each group among the plurality of groups has a unique dominant feature among a plurality of features of the plurality of paths. The dominant feature of a group among the plurality of groups is slack. The method further includes testing at least one path in a group among the plurality of groups. The method also includes, in response to the testing indicating that the at least one path fails, modifying at least one of the IC layout diagram, at least a portion of at least one library having cells included in the IC layout diagram, or a manufacturing process for manufacturing an IC corresponding to the IC layout diagram.

Integrated circuit design method, system and computer program product

A method of manufacturing a semiconductor device includes reducing errors in a migration of a first netlist to a second netlist, the first netlist corresponding to a first semiconductor process technology (SPT), the second first netlist corresponding to a second SPT, the first and second netlists each representing a same circuit design, the reducing errors including: inspecting a timing constraint list corresponding to the second netlist for addition candidates; generating a first version of the second netlist having a first number of comparison points relative to a logic equivalence check (LEC) context, the first number of comparison points being based on the addition candidates; performing a LEC between the first netlist and the first version of the second netlist, thereby identifying migration errors; and revising the second netlist to reduce the migration errors, thereby resulting in a second version of the second netlist.

Method and system for reducing migration errors

Process for determining defects in cells of a circuit is provided. A layout of a circuit is received. The layout comprises a first cell and a second cell separated by a boundary circuit. Bridge pairs for the first cell and the second cell is determined. The bridge pairs comprises a first plurality of boundary nodes of the first cell paired with a second plurality of boundary nodes of the second cell. Bridge pair faults between the bridge pairs are modeled. A test pattern for the bridge pair faults is generated.

Fault diagnostics

A testing probe structure for wafer level testing semiconductor IC packaged devices under test (DUT). The structure includes a substrate, through substrate vias, a bump array formed on a first surface of the substrate for engaging a probe card, and at least one probing unit on a second surface of the substrate. The probing unit includes a conductive probe pad formed on one surface of the substrate and at least one microbump interconnected to the pad. The pads are electrically coupled to the bump array through the vias. Some embodiments include a plurality of microbumps associated with the pad which are configured to engage a mating array of microbumps on the DUT. In some embodiments, the DUT may be probed by applying test signals from a probe card through the bump and microbump arrays without direct probing of the DUT microbumps.

Test probing structure

Growing community of inventors

Dublin, CA, United States of America

Sandeep Kumar Goel