Veeco Instruments Inc.

Sandeep Krishnan

Alexander I Gurary

Keng Moy

Matthew King

Vadim Boguslavskiy

Yuliy Rashkovsky

Steven Krommenhoek

Mandar Deshpande

Leo A Chin

Chenghung Paul Chang

Lukas Urban

Earl Marcelo

Aniruddha Bagchi

Raghu Chikkanayakanahalli Moorkannaiah

William E Quinn

Bojan Mitrovic

Joshua Mangum

Matthew J Van Doren

Aniruddh Parekh

Ian Kunsch

Jeffrey Scott Montgomery

Jeffery S Montgomery

Siddharth Patel

A substrate reactor with centering pin for epitaxial deposition includes a vacuum chamber and a tube configured to rotate in the vacuum chamber around a tube geometrical center axis. A substrate carrier forming a pocket dimensioned for holding a substrate on a top surface includes an aperture that is centrally located on a bottom surface. The substrate carrier is positioned on and in contact with a top surface of the tube. A centering pin is positioned along a geometrical center axis of rotation of the substrate carrier. The centering pin has a first end positioned in the aperture on the bottom surface of the substrate carrier and a second end fixed inside the reactor so that the substrate carrier rotates around the geometrical center axis of the substrate carrier independent of the geometrical center axis of the tube.

Reactor with centering pin for epitaxial deposition

A wafer carrier for use in a chemical vapor deposition (CVD) system includes a plurality of wafer retention pockets, each having a peripheral wall surface surrounding a floor surface and defining a periphery of that wafer retention pocket. Each wafer retention pocket has a periphery with a shape defined by at least a first arc having a first radius of curvature situated around a first arc center and a second arc having a second radius of curvature situated around a second arc center. The second arc is different from the first arc, either by its radius of curvature, arc center, or both.

Wafer carrier having retention pockets with compound radii for chemical vapor deposition systems

Multi-filament heater assembly

Chemical vapor deposition wafer carrier with thermal cover

A self-centering wafer carrier system for a chemical vapor deposition (CVD) reactor includes a wafer carrier comprising an edge. The wafer carrier at least partially supports a wafer for CVD processing. A rotating tube comprises an edge that supports the wafer carrier during processing. An edge geometry of the wafer carrier and an edge geometry of the rotating tube being chosen to provide a coincident alignment of a central axis of the wafer carrier and a rotation axis of the rotating tube during process at a desired process temperature.

Self-centering wafer carrier system for chemical vapor deposition

Wafer carrier with a 33-pocket configuration

Wafer carrier with a 14-pocket configuration

A wafer carrier for use in a system for growing epitaxial layers on one or more wafers by chemical vapor deposition. The wafer carrier includes wafer retention pockets recessed in its body. Each pocket includes a floor surface and a peripheral wall surface surrounding the floor surface and defining a periphery of that pocket. Each pocket has a center situated along a corresponding wafer carrier radial axis. In each of the pockets, a set of bumpers is positioned primarily at a distal portion of the wafer retention pocket opposite the central axis so as to maintain a gap of at least a predefined size between the peripheral wall surface at the distal portion and an edge of a wafer to be placed in the wafer retention pocket.

Wafter carrier for chemical vapor deposition systems

A wafer carrier and methods of making the same for use in a system for growing epitaxial layers on one or more wafers by chemical vapor deposition. The wafer carrier includes wafer retention pockets recessed in its body. A thermally-insulating spacer is situated at least partially in the at least one wafer retention pocket and arranged to maintain a spacing between the peripheral wall surface and the wafer, the spacer being constructed from a material having a thermal conductivity less than a thermal conductivity of the wafer carrier such that the spacer limits heat conduction from portions of the wafer carrier body to the wafer. The wafer carrier further includes a spacer retention feature that engages with the spacer and includes a surface oriented to prevent centrifugal movement of the spacer when subjected to rotation about the central axis.

Wafer carrier having provisions for improving heating uniformity in chemical vapor deposition systems

Wafer carrier having retention pockets with compound radii for chemical vapor desposition systems

Self-centering wafer carrier for chemical vapor deposition

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Jersey City, NJ, United States of America

Sandeep Krishnan