Fujitsu Corporation

Sanae Shimizu

Atsushi Yamada

Kenji Imanishi

Yuji Ito

Toyoo Miyajima

Mitsuru Otagiri

Yuko Miyake

A semiconductor device includes a substrate; a first nitride semiconductor layer provided over the substrate and having a nitride-polar surface; a gate electrode provided over the first nitride semiconductor layer; and a semiconductor layer provided on the first nitride semiconductor layer and only under the gate electrode, and exhibiting a polarization.

Semiconductor device and method of manufacturing the same, and power supply apparatus

A compound semiconductor device includes: a substrate; an electron transit layer formed over the substrate; an electron supply layer formed over the electron transit layer; and a buffer layer formed between the substrate and the electron transit layer and including AlGaN(0&#x2266;x&#x2266;1), wherein the x value represents a plurality of maximums and a plurality of minimums in the direction of the thickness of the buffer layer, and the variation of x in any area having a 1 nm thickness in the buffer layer is 0.5 or less.

Compound semiconductor device and method of manufacturing the same

A compound semiconductor device including: a substrate; an electron transit layer formed on and above the substrate; and an electron supply layer formed on and above the electron transit layer, wherein a first region or regions having a smaller thermal expansion coefficient than the electron transit layer and a second region or regions having a larger thermal expansion coefficient than the electron transit layer are mixedly present on a surface of the substrate.

Compound semiconductor device and method for manufacturing the same

A manufacturing method of a magnetic recording medium, the magnetic recording medium having a structure where plural magnetic recording areas and isolation areas in a magnetic recording layer are formed on a non-magnetic substrate, the isolation areas being configured to magnetically isolate the magnetic recording areas, the manufacturing method includes a step of forming the magnetic layer on the non-magnetic substrate, the magnetic layer being made of a hard magnetic material having a magnetic coercive force whereby magnetic recording is impossible; and a step of performing ion implantation partially at positions corresponding to the plural magnetic recording areas of the magnetic layer so that the magnetic recording areas are formed by reducing the magnetic coercive force in the positions of the ion implantation to a magnetic-recordable magnetic coercive force, and allowing the isolation areas to maintain the magnetic coercive force whereby magnetic recording is impossible.

Manufacturing method of magnetic recording medium, the magnetic recording medium, and magnetic recording and reproducing apparatus

A thin film magnetic head comprising a substrate, a lower magnetic pole provided on the substrate, a write gap layer located on the lower magnetic pole, and an upper magnetic pole located on the gap layer, the upper magnetic pole including a plating base layer in contact with the gap layer, wherein the plating base layer of the upper magnetic pole is made of a magnetic film having a saturation magnetic flux density of 1.2 T or larger. The thin film magnetic head has an increased recording density, and is adapted to recording at an increased frequency.

Thin film magnetic head

A magnetic thin film forming method forms a magnetic thin film on a conductive film by electroplating using a plating bath containing Ni ions, Fe ions, Mo ions and an organic acid. A concentration of the organic acid in the plating bath is 3-20 times a concentration of the Mo ions in the plating bath. An organic acid concentration in the plating bath versus an Mo ion concentration of the plating bath is set to be a suitable value, whereby an Mo mixed amount in the magnetic thin film can be set to be a suitable value. Accordingly, a magnetic thin film having a large specific resistance value and good magnetic characteristics can be formed.

Growing community of inventors

Kawasaki, Japan

Sanae Shimizu