First Solar, Inc.

Varian Semiconductor Associates, Inc.

San Yu

Pratima V Addepalli

Gang Xiong

Imran Khan

Veluchamy Palaniappagounder

Benyamin Buller

David K Hwang

Atul Gupta

Rick C Powell

Markus Gloeckler

Zhibo Zhao

Ming Lun Yu

Rui Shao

Akhlesh Gupta

Andrei Los

Scott Christensen

Pawel Mrozek

A photovoltaic device includes a substrate, a transparent conductive oxide, an n-type window layer, a p-type absorber layer and an electron reflector layer. The electron reflector layer may include zinc telluride doped with copper telluride, zinc telluride alloyed with copper telluride, or a bilayer of multiple layers containing zinc, copper, cadmium and tellurium in various compositions. A process for manufacturing a photovoltaic device includes forming a layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming an electron reflector layer over a p-type absorber layer.

Photovoltaic device including a back contact and method of manufacturing

A method to improve CdTe-based photovoltaic device efficiency is disclosed, the method including steps for removing surface contaminants from a semiconductor absorber layer prior to the deposition or formation of a back contact layer on the semiconductor absorber layer, the surface contaminants removed using at least one of a dry etching process and a wet etching process.

Method of manufacturing a photovoltaic device

A method to improve operation of a CdTe-based photovoltaic device is disclosed, the method comprising the steps of depositing a semiconductor absorber layer adjacent to a substrate, depositing a semiconductor buffer layer adjacent to the semiconductor layer, and annealing at least one of the semiconductor absorber layer and the semiconductor buffer layer with one of a laser and a flash lamp.

A method of LED manufacturing is disclosed. A coating is applied to a mesa. This coating may have different thicknesses on the sidewalls of the mesa compared to the top of the mesa. Ion implantation into the mesa will form implanted regions in the sidewalls in one embodiment. These implanted regions may be used for LED isolation or passivation.

LED mesa sidewall isolation by ion implantation

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Perrysburg, OH, United States of America

San Yu