Ford Motor Company Limited

Samuel S Shinozaki

Allen H Meitzler

Mati Mikkor

Thomas J Whalen

John Richard Baer

William T Donlon, Jr

Walter Trela

The present invention discloses a composition for a valve of an advanced heat engine. The valve comprises grains of aluminum-doped silicon carbide. The grains are of two main types: (1) a matrix of equi-axed grains of alpha and beta SiC for optimum distribution of mechanical properties; and (2) elongated grains of alpha SiC which are distributed within the matrix for reinforcement. The invention also comprises a process for making such valves. The process begins with a powder of aluminum-doped beta-silicon carbide. A binder and a solvent are then added to the powder, and the mixture is agitated while being heated. The mixture is then transferred to an injection mold which is used to form a molded component. The molded component is then sintered and machined into desired dimensions. An annealing step is then performed so that the component exhibits the characteristics of improved strength and toughness.

Composition and process for making an engine valve

This specification discloses a method of fabricating a titanium rectifier circuit element. A titanium dioxide main body is formed with a pair of spaced faces each of which having thereon a platinum electrode. A dc voltage is applied across this structure, heating the structure to a temperature of about 750.degree.-850.degree. C. In this temperature range, the titanium dioxide body is subjected to a cyclic sequence of exposures to oxidizing and reducing atmospheres. The final step includes cooling down the titanium dioxide body in the presence of a reducing atmosphere with an applied dc electric field.

Method of fabricating a titanium dioxide rectifier

A method of providing a substrate with a layer of a tertiary compound comprising silicon, silicon carbide and a transition series metal. In accordance with the method, a substrate having at least a surface layer thereon of a transition series metal is coated with silicon carbide particles having an average particle diameter in the range of up to about two microns. The coated substrate is then heated in an inert atmosphere to a temperature between 1000.degree. and 1300.degree. C. for sufficient time to allow diffusion to occur between the silicon carbide and the transition series metal layer, thereby forming the tertiary compound. Substrates coated with the tertiary compound are particularly suitable for preparation of alkali metal/polysulfide batteries wherein the substrate may be exposed to corrosive attack by molten polysulfide salts.

Conductive corrosion resistant material and alkali metal/polysulfide

A method of forming a silicon carbide ceramic material without forming large areas of a feathered alpha silicon carbide microstructure is disclosed. Basically, the method involves heating the silicon carbide material to a temperature in a range from about 1850.degree. C. to about 1920.degree. C., preferably about 1900.degree. C., and maintaining the material at the selected temperature for a period of time from about 6 hours to about 12 hours. Such a heating cycle produces silicon carbide ceramic material which does not have large areas of a feathered alpha silicon carbide microstructure therein.

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Livonia, MI, United States of America

Samuel S Shinozaki