International Business Machines Corporation

Samuel McKnight

Adreanne Kelly

Kevin Shawn Petrarca

Richard Paul Volant

George Frederick Walker

Frederic Beaulieu

John Ulrich Knickerbocker

Wolfgang Sauter

Takashi Hisada

Chirag Suryakant Patel

Harvey Charles Hamel

David Angell

Caitlin W Weinstein

Hiromitsu Miyai

Sampath Purushothaman

Timothy Joseph Dalton

Carlos Juan Sambucetti

Kwong Hon Wong

William Joseph Murphy

John Harold Magerlein

Matthew J Farinelli

Lloyd G Burrell

Gobinda Das

Anna Karecki, Legal Representative

Joseph J Van Horn

Steven J Duda

Caitlin Weinstein

A silicon carrier space transformer assembly includes one or more silicon structures, which provide space transformer scaling to permit interconnection for fine pitch input/output interconnections with a semiconductor die or wafer, and fine pitch test probe tips connected to the one or more silicon structures.

Silicon carrier space transformer and temporary chip attach burn-in vehicle for high density connections

Techniques for bond pad fabrication are provided. In one aspect, a method of forming a bond pad comprises the following steps. At least one alloying element is selectively introduced to at least a portion of at least one surface of the bond pad. The at least one alloying element is diffused into at least a portion of the bond pad through one or more thermal cycles. The at least one alloying element may be selectively introduced to the bond pad by depositing an alloying element layer comprising the at least one alloying element onto the bond pad and patterning and etching at least a portion of the layer.

Techniques for improving bond pad performance

A method to fabricate a high density, minimal pitch, thermally matched contactor assembly to maintain electrical contact with contact regions on fully processed semiconductors, preferably while still in wafer form, and throughout a range of temperatures. A guide plate and a contactor assembly for such use, comprising a substrate formed of a material having a coefficient of thermal expansion approximately equal to that of the device; and at least one hole in the guide plate for receiving an electrical contact (probe element) for contacting at least one respective region on said surface, said at least one hole being sized and shaped so as to accept said electrical contact, while allowing said electrical contact (probe element) to move with respect to said hole in said guide plate. The material can be one of silicon, borosilicate glass and cordierite.

Method for producing thermally matched probe assembly

Disclosed is a reinforced bond pad structure having nonplanar dielectric structures and a metallic bond layer conformally formed over the nonplanar dielectric structures. The nonplanar dielectric structures are substantially reproduced in the metallic bond layer so as to form nonplanar metallic structures. Surrounding each of the nonplanar metallic structures is a ring of dielectric material which provides a hard stop during probing of the bond pad so as to limit the amount of bond pad that can be removed during probing.

Internally reinforced bond pads

A method for forming a space transformer (and a space transformer formed by the method) having a first plate and a second plate, the plates being separated by a frame, and electrical connectors for providing electrical connections between electrical contacts which are relatively closely spaced on the first plate and relatively more widely spaced on the second plate. The method comprises attaching first ends of wires to first electrically conductive regions on the first plate; forming insulating layers over the wires; forming electrically conductive coverings over the insulating layers; and connecting second ends of the wires to second electrically conductive regions on the second plate.

High density space transformer and method of fabricating same

A semiconductor device, and a method of fabricating the device, having a copper wiring level and an aluminum bond pad above the copper wiring level. In addition to a barrier layer which is normally present to protect the copper wiring level, there is a composite layer between the aluminum bond pad and the barrier layer to make the aluminum bond pad more robust so as to withstand the forces of bonding and probing. The composite layer is a sandwich of a refractory metal and a refractory metal nitride.

Semiconductor device having a composite layer in addition to a barrier layer between copper wiring and aluminum bond pad

A system for testing a collection of device chips by temporarily attaching them to a carrier having a plurality of receptacles with microdendritic features; the receptacles matching with and pushed in contact with a matching set of contact pads on the device chips; said carrier additionally having test pads connected to the receptacles through interconnect wiring. The system allows connecting the chips together and testing the collection as a whole by probing the test pads on the carrier. Burn-in of the collection of chips can also be performed on the temporary carrier, which is reusable.

Temporary device attach structure for test and burn in of microjoint interconnects and method for fabricating the same

Growing community of inventors

New Paltz, NY, United States of America

Samuel McKnight