Applied Materials, Inc.

Samuel Luong

Fred Conrad Redeker

David Walter Groechel

Semyon Sherstinsky

Terrance Y Lee

Robert J Steger

Petru N Nitescu

Maya Shendon

An improved plasma etching apparatus is disclosed for the plasma etching of semiconductor wafers. The improvement includes conductive means for inhibiting arcing from electrical charges accumulating on one or more non-conductive protective surfaces on members at rf potential within the apparatus, such as the metal pedestal which supports the wafer being etched and supplies the rf potential to it, and the clamping ring mechanism which clamps the wafer to the pedestal. The conductive means may include one or more conductive plugs extending through one or more of the protective surfaces or a conductive ring surrounding the wafer on the top surface of the metal pedestal. The conductive material is selected from the class consisting of carbon; a silicide; titanium nitride; a carbide; and a semiconductor such as silicon doped to provide a resistivity ranging from about 0.001 to about 20 ohm-cm.

Plasma etching apparatus with conductive means for inhibiting arcing

Growing community of inventors

San Jose, CA, United States of America

Samuel Luong