Ims Nanofabrication Ag

Institut Fur Mikroelektronik

Samuel Kvasnica

Elmar Platzgummer

Christoph Spengler

Reinhard Springer

Florian Letzkus

Hans Löschner

Markus Wagner

Jörg Butschke

Mathias Irmscher

Method for computing an exposure pattern for exposing a desired pattern on a target in a charged-particle lithography apparatus, in which a particle beam is directed to and illuminates a pattern definition device comprising an aperture array composed of a plurality of blanking apertures through which said particle beam penetrates for writing said desired pattern by exposing a multitude of pixels within an exposure area on the target, said method taking into account a spatially dependent distortion of the target within the exposure area, with respect to dislocations transversal to the direction of the particle beam.

Correction of short-range dislocations in a multi-beam writer

The invention relates to a multi-beam deflector array device for use in a particle-beam exposure apparatus employing a beam of charged particles, the multi-beam deflector array device having a plate-like shape with a membrane region, the membrane region including a first side facing towards the incoming beam of particles, an array of apertures, each aperture allowing passage of a corresponding beamlet formed out of the beam of particles, a plurality of depressions, each depression being associated with at least one aperture, and an array of electrodes, each aperture being associated with at least one electrode and each electrode being located in a depression, the electrodes being configured to realize a non-deflecting state, wherein the particles that pass through the apertures are allowed to travel along a desired path, and a deflecting state, wherein the particles are deflected off the desired path.

Multi-beam deflector array device for maskless particle-beam processing

Growing community of inventors

Vienna, Austria

Samuel Kvasnica