Applied Materials Israel Limited

Samuel Ives Nackash

Efim Vinnitsky

Guy Eytan

Natan Schlimoff

Albert Karabekov

Yuri Belenky

Yosef Basson

Emil Weisz

Yohanan Madmon

Lavy Shavit

Itzak Yair

Shmuel Barak Mizrahi

Ittamar Levy

Rafi Kraus

A method, a non-transitory computer readable medium and a detection system for detecting an electric arc hazard related to a wafer. The detection system may include a measurement unit, an electrode and a processing unit. The measurement unit may be configured to provide a measurement result by measuring an electrical parameter of the electrode during a test period, while the wafer may be moved in relation to the electrode, and while a certain electrical field may be formed between the electrode and the wafer; wherein the certain electrical field induces detached ends of partially detached conductive elements of the wafer to move away from the wafer. The processing unit may be configured to determine an existence of the electric arc hazard based on the measurement result.

Detection of an electric arc hazard related to a wafer

A computer program product and a method for dissipation of an electrical charge stored in a region of an object. The method may include (a) sensing, by at least one sensor, an electrical charging status of the region of the object, while the object is located within a vacuum chamber and while a gaseous pressure within the vacuum chamber is below a certain vacuum pressure threshold; and (b) performing, based on the charging status of the given region, an electrical charge dissipation process that comprises increasing the gaseous pressure within the vacuum chamber to be within a given gaseous pressure range that facilitates a dissipation, by breakdown, of the electrical charge stored in the region of the object to the vacuum chamber.

System, computer program product, and method for dissipation of an electrical charge

A chuck interface that includes a mirror; an inner surface that is shaped and sized to match a portion of a sidewall of a chuck; wherein the inner surface is mechanically coupled to the mirror; and at least one interfacing element for assisting in attaching the chuck to the mirror; and wherein a difference between a thermal expansion coefficient of the chuck and a thermal expansion coefficient of the mirror does not exceed 0.5 micron*Kelvin per Meter.

Integrated chuck

A mirror support module having a body that includes an internal portion surrounding an inner space, an external portion, an aperture formed in the body and an intermediate region that extends between a segment of the internal portion and the aperture. When the intermediate region is subjected to a force directed in a first direction, the intermediate region can be moved in the first direction towards the aperture to reduce an area of the aperture while the external portion remains stable regardless of movement of the intermediate region.

Mirror support module, a kit and a scanning electron microscope

A semiconductor wafer is received at a first chamber that is at a first pressure level. The semiconductor wafer is at a first temperature and is heated, by a first heating module, to a second temperature while the pressure level of the first chamber is reduced from the first pressure level to a second pressure level. The semiconductor wafer is then provided to a supporting element of a second chamber which maintains a third pressure level that is closer to the second pressure level than to the first pressure level; the supporting element being at a third temperature that is closer to the second temperature than to the first temperature.

System and method for temperature control of a semiconductor wafer

Growing community of inventors

Nes Ziona, Israel

Samuel Ives Nackash