Dell Products Inc.

Samuel Hudson

Robert J Proulx

Michael Rijo

Leland W Thompson

Erhan Aslan

Frederick K H Lee

Girish B Desai

Matthew Borsini

A modular test system includes a modular controller subsystem coupled to a modular tested subsystem by a modular intermediary subsystem. The modular intermediary subsystem transmits communications between the modular controller subsystem and the modular tested subsystem during testing operations performed by the modular controller subsystem, and performs at least one testing function that is not available in the modular controller subsystem during the testing operations performed by the modular controller subsystem.

Modular test system

A multi-zone temperature testing system includes a test device having components, a multi-zone temperature testing device that is coupled to the test device and that includes a first thermoelectric module that is located adjacent a first subset of the components and a second thermoelectric module that is located adjacent a second subset of the components, and a temperature control subsystem that is coupled to the multi-zone temperature testing device. The temperature control subsystem controls the first thermoelectric module in the multi-zone temperature testing device to produce a first heat flux that provides a testing temperature for the first subset of the components, and controls the second thermoelectric module in the multi-zone temperature testing device to produce a second heat flux that is different than the first heat flux and that provides the testing temperature for the second subset of the components.

Multi-zone temperature testing system

A pseudo Single Level Cell (pSLC)-scan-based storage device initialization system includes a chassis, a storage subsystem that is housed in the chassis, and a pSLC-scan-based storage device initialization subsystem that is housed in the chassis and coupled to the storage subsystem. The pSLC-scan-based storage device initialization subsystem reads respective subsets of pSLC data from the storage subsystem over a plurality of different read voltage thresholds, and identifies a first read voltage threshold that is included in the plurality of different read voltage thresholds and at which a respective first subset of the pSLC data read from the storage subsystem experienced errors within a predetermined error range. The pSLC-scan-based storage device initialization subsystem then uses the first read voltage threshold to estimate a powered-off data retention time for the storage subsystem, and performs post-data-retention initialization operations based on the powered-off data retention time for the storage subsystem.

PSLC-scan-based storage device initialization system

A temperature-accelerated solid-state storage testing method includes writing data to a storage system and subjecting the storage system to a first temperature range for a first time period that is equivalent to operation at a lower/second temperature for a greater/second time period. Subsequently, the data from the storage system is read within a third time period at a third temperature range to generate first test data. The storage system is then subjected to the first temperature range for a fourth time period that was reduced relative to the first time period based on the reading of the data to generate the first test data causing the operation of storage system to be equivalent to operating at the second temperature range for a fifth time period. Subsequently the data from the storage system is read within the third time period at the third temperature range to generate second test data.

Temperature-accelerated solid-state storage testing methods

A storage device reclassification system includes a storage device reclassification subsystem coupled to a storage device that has a NAND storage subsystem and that is configured to perform first storage operations associated with a first storage device classification. The storage device reclassification subsystem performs testing operations on the NAND storage subsystem and, based on the testing operations, identifies at least one reduced capability of the NAND storage subsystem. Based on the at least one reduced capability of the NAND storage subsystem, the storage device reclassification subsystem determines at least one storage device operation modification and performs the at least one storage device operation modification on the storage device in order to configure the storage device to perform second storage operations that are different than the first storage operations and that are associated with a second storage device classification that is different than the first storage device classification.

Storage device reclassification system

In general, embodiments of the invention relate tracking the operating temperature of the solid-state memory modules (SSMMs) in order to improve their performance.

Growing community of inventors

Round Rock, TX, United States of America

Samuel Hudson