Seagate Technology Incorporated

Intevac, Inc.

Hia, Inc.

Samuel Dacke Harkness, Iv

Qixu David Chen

Rajiv Yadav Ranjan

Zhong Stella Wu

Zhong (Stella) Wu

Thomas P Nolan

Li-Lien Lee

Hans Juergen Richter

Chung-hee Chang

Charles Liu

Terry Bluck

Erol Girt

Hans Jürgen Richter

Quang N Tran

Kevin P Fairbairn

Mariana Rodica Munteanu

Charles Frederick Brucker

Raj Thangaraj

Eric C Lawson

Patrick Leahey

David W Brown

David Fang Wei Chen

Robert L Ruck

Tom Nolan

Charles Chengyea Leu

Michael Joseph Stirniman

Dieter Klaus Weller

Xiaoding Ma

Connie C Liu

Jie Zou

Jeffrey Shane Reiter

Shanghsien Alex Rou

Alexander Yulievich Dobin

Eric Steck Freeman

Qixu (David) Chen

Stella Wu Zhong

Kien Vinh Hua

Stella Z Wu

An apparatus has a keeper plate with a keeper plate outer perimeter. An annular magnet array with an annular magnet array outer perimeter is coincident with the keeper plater outer perimeter. An inner top magnet is positioned on a centerline of a first side of the keeper plate and an inner bottom magnet is positioned on the centerline of a second side of the keeper plate. The inner top magnet is of a first magnetic orientation and the annular magnet array and the inner bottom magnet have a second magnetic orientation opposite the first magnetic orientation to form a magnetic field environment that provides plasma confinement of ionizing electrons which causes a gas operative as a reactive gas and sputter gas to become ionized and subsequently be directed to a target cathode while simultaneously causing the ionization of sputtered species which are dispersed across a substrate.

Multifocal magnetron design for physical vapor deposition processing on a single cathode

A method for forming thin film layer having micro-voids therein. The method proceeds by dispersing micro-particles over the surface of a substrate. The micro particles are made of sublimable material. Then the thin film layer is formed over the surface, so as to cover the particles. The thin film is then etched back so as to expose the particles at least partially. The material of the particles is then sublimed, e.g., by heating the substrate, thereby leaving micro-voids inside the thin film layer. The micro voids can be filled or remain exposed to generate textured surface.

Creation of distributed voids in thin films

An apparatus has a cathode target with a cathode target outer perimeter. An inner magnet array with an inner magnet array inner perimeter is within the cathode target outer perimeter. The inner magnet array includes an inner magnet array base portion and an inner magnet array upper portion. A keeper plate assembly is connected to the inner magnet array upper portion and isolates the inner magnet array upper portion from the inner magnet array base portion. An outer magnet array is connected to a bottom surface of the keeper plate. The outer magnet array has an outer magnet array outer perimeter larger than the inner magnet array inner perimeter. The inner magnet array upper portion has a first magnetic orientation and the outer magnet array and the inner magnet array base portion have a second magnetic orientation opposite the first magnetic orientation.

Disclosed is a substrate processing system which enables combined static and pass-by processing. Also, a system architecture is provided, which reduces footprint size. The system is constructed such that the substrates are processed therein vertically, and each chamber has a processing source attached to one sidewall thereof, wherein the other sidewall backs to a complementary processing chamber. The chamber system can be milled from a single block of metal, e.g., aluminum, wherein the block is milled from both sides, such that a wall remains and separates each two complementary processing chambers.

System architecture for combined static and pass-by processing

An apparatus has a primary cathode configured for free space interaction with a substrate operative as an anode. A first annular cathode faces a second annular cathode. The primary cathode, the first annular cathode, the second annular cathode are axially aligned. The outer diameters of the first annular cathode and the second annular cathode correspond to the outer diameter of the primary cathode. The primary cathode provisions deposited material on the substrate with controllable plasma density to levels above 1&#xd7;10m, with ignition capability above 0.05 Pa.

Apparatus for enhanced physical vapor deposition

A physical vapor deposition (PVD) chamber for depositing a transparent and clear hydrogenated carbon, e.g., hydrogenated diamond-like carbon, film. A chamber body is configured for maintaining vacuum condition therein, the chamber body having an aperture on its sidewall. A plasma cage having an orifice is attached to the sidewall, such that the orifice overlaps the aperture. Two sputtering targets are situated on cathodes inside the plasma cage and are oriented opposite each other and configured to sustain plasma there-between and confined inside the plasma cage. The plasma inside the cage sputters material from the targets, which then passes through the orifice and aperture and lands on the substrate. The substrate is moved continuously in a pass-by fashion during the process.

Method to produce highly transparent hydrogenated carbon protective coating for transparent substrates

A quantum dot (QD) sensitized wide bandgap (WBG) semiconductor heterojunction photovoltaic (PV) device comprises an electron conductive layer; an active photovoltaic (PV) layer adjacent the electron conductive layer; a hole conductive layer adjacent the active PV layer; and an electrode layer adjacent the hole conductive layer. The active PV layer comprises a wide bandgap (WBG) semiconductor material with E&#x2267;2.0 eV, in the form of a 2-dimensional matrix defining at least two open spaces, and a narrower bandgap semiconductor material with E&#x3c;2.0 eV, in the form of quantum dots (QD's) filling each open space defined by the matrix of WBG semiconductor material and establishing a heterojunction therewith. The active PV layer is preferably fabricated by a co-sputter deposition process, and the QD's constitute from about 40 to about 90 vol. % of the active PV layer.

Quantum dot-sensitized wide bandgap semiconductor heterojunction photovoltaic devices

A photovoltaic apparatus includes an absorber including a first quantum dot layer having a first plurality of quantum dots of a first quantum dot material in a first matrix material, and an up-converter layer positioned adjacent to the absorber layer, the up-converter layer including a second quantum dot layer having a second plurality of quantum dots of a second quantum dot material and a second matrix material.

Photovoltaic device with an up-converting quantum dot layer and absorber

A perpendicular magnetic recording medium having a dual-layer magnetic film is disclosed. The bottom layer is completely exchange decoupled, and the top layer contains a certain amount of exchange coupling optimized for recording performance. Preferably, the bottom magnetic layer contains stable oxide material (for example, TiO) and other non-magnetic elements (for example, Cr). A method of manufacturing the media is also disclosed.

Method and manufacture process for exchange decoupled first magnetic layer

A bit patterned magnetic recording medium comprises a substrate having a surface, and a plurality of spaced apart magnetic elements on the surface, each element constituting a discrete magnetic domain or bit of the same structure and comprised of a stack of thin film layers including in order from the substrate surface: a seed layer; and a perpendicular magnetic recording layer in contact with a surface of the seed layer and comprising a CoPtCralloy material, where 0.05&#x2266;x&#x2266;0.35 and 0&#x2266;y&#x2266;0.15. The CoPtCralloy material has a first order magnetic anisotropy constant Kup to about 2&#xd7;10erg/cm, a saturation magnetization Mup to about 1200 emu/cm, an anisotropy field H=2K/Mup to about 35 kOe, a hexagonal () crystal structure with c-axis perpendicular to a surface thereof, and an X-Ray diffraction (XRD) rocking curve with a full width at half maximum (FWHM) of &#x2dc;5&#xb0; or less.

CoPtCr-based bit patterned magnetic media

The present invention relates to a method of synthesizing an ordered magnetic alloy comprising obtaining a substrate and performing sequential sputter deposition of multiple atomic monolayers of the magnetic alloy.

Method to synthesize ordered magnetic alloys at low temperature

A recording medium having a substrate, a first soft magnetic underlayer, a second soft magnetic underlayer and a perpendicular magnetic recording layer without a spacer layer between the first and second soft magnetic underlayers is disclosed.

Perpendicular media with dual soft magnetic layers

Growing community of inventors

Berkeley, CA, United States of America

Samuel Dacke Harkness, Iv