Saint-gobain Cristaux Et Detecteurs

Saint-gobain Cristaux & Détecteurs

Luxium Solutions, LLC

Other

Saint-gobain Ceramics & Plastics, Inc.

Luxium Solutions Sas

Samuel Blahuta

Vladimir Ouspenski

Julien Lejay

Bruno Viana

Eric E Mattmann

Damien Pauwels

Raphaël Huchet

Kan Yang

A scintillation compound can include a rare earth silicate. The rare-earth silicate may be lutetium yttrium orthosilicate. The rare-earth silicate may be doped with Ce. The rare-earth silicate doped with Ce may include a rare-earth element in a tetravalent state at a concentration of at least approximately 10 ppm atomic of the scintillation compound.

Scintillation compound including a rare earth element and a process of forming the same

A scintillation crystal can include a rare earth silicate, an activator, and a Group 2 co-dopant. In an embodiment, the Group 2 co-dopant concentration may not exceed 200 ppm atomic in the crystal or 0.25 at % in the melt before the crystal is formed. The ratio of the Group 2 concentration/activator atomic concentration can be in a range of 0.4 to 2.5. In another embodiment, the scintillation crystal may have a decay time no greater than 40 ns, and in another embodiment, have the same or higher light output than another crystal having the same composition except without the Group 2 co-dopant. In a further embodiment, a boule can be grown to a diameter of at least 75 mm and have no spiral or very low spiral and no cracks. The scintillation crystal can be used in a radiation detection apparatus and be coupled to a photosensor.

Scintillation crystal including a co-doped rare earth silicate, a radiation detection apparatus including the scintillation crystal, and a process of forming the same

A scintillation compound can include a rare earth element that is in a divalent (RE) or a tetravalent state (RE). The scintillation compound can include another element to allow for better change balance. The other element may be a principal constituent of the scintillation compound or may be a dopant or a co-dopant. In an embodiment, a metal element in a trivalent state (M) may be replaced by REand a metal element in a divalent state (M). In another embodiment, Mmay be replaced by REand M. In a further embodiment, Mmay be replaced by a REand a metal element in a monovalent state (M). The metal element used for electronic charge balance may have a single valance state, rather than a plurality of valence states, to help reduce the likelihood that the valance state would change during formation of the scintillation compound.

Scintillation compound including a rare earth element in a tetravalent state

A scintillation crystal can include a rare earth silicate, an activator, and a Group 2 co-dopant. In an embodiment, the Group 2 co-dopant concentration may not exceed 200 ppm atomic in the crystal or 0.25 at in the melt before the crystal is formed. The ratio of the Group 2 concentration/activator atomic concentration can be in a range of 0.4 to 2.5. In another embodiment, the scintillation crystal may have a decay time no greater than 40 ns, and in another embodiment, have the same or higher light output than another crystal having the same composition except without the Group 2 co-dopant. In a further embodiment, a boule can be grown to a diameter of at least 75 mm and have no spiral or very low spiral and no cracks. The scintillation crystal can be used in a radiation detection apparatus and be coupled to a photosensor.

The present disclosure relates to a process for fabricating a crystalline scintillator material with a structure of elpasolite type of theoretical composition ABCMXwherein:

Fabrication of a scintillator material of elpasolite type

The present disclosure relates to a process for fabricating a crystalline scintillator material with a structure of elpasolite type of theoretical composition ABCMXwherein: y representing the atomic fraction of substitution of C by M and being in the range extending from 0 to 0.05, comprising its crystallization by cooling from a melt bath comprising r moles of A and s moles of B, the melt bath in contact with the material containing A and B in such a way that 2s/r is above 1. The process shows an improved fabrication yield. Moreover, the crystals obtained can have compositions closer to stoichiometry and have improved scintillation properties.

A scintillator can include a monocrystalline compound having a general formula NaLiX, where 0&#x3c;y&#x3c;1 and X is at least one halogen or any combination of halogens. In an embodiment, the scintillator can have a Pulse Shape Discrimination Figure of Merit of at least 1 at a temperature of 25&#xb0; C., at a temperature of 150&#xb0; C., or both.

Alkali halide scintillator and uses thereof

The present disclosure relates to a process for fabricating a crystalline scintillator material with a structure of elpasolite type of theoretical composition ABCMXwherein: A is chosen from among Cs, Rb, K, Na; B is chosen from among Li, K, Na; C is chosen from among the rare earths, Al, Ga; M is chosen from among the alkaline earths, X is chosen from among F, Cl, Br, I; y representing the atomic fraction of substitution of C by M and being in the range extending from 0 to 0.05, comprising its crystallization by cooling from a melt bath comprising r moles of A and s moles of B, the melt bath in contact with the material containing A and B in such a way that 2s/r is above 1. The process shows an improved fabrication yield. Moreover, the crystals obtained can have compositions closer to stoichiometry and have improved scintillation properties.

A process for fabricating a crystalline scintillator material with an elpasolite structure that has a theoretical composition of ABCMXcan include conducting crystallization by cooling from a melt bath including r moles of A and s moles of B. A is chosen from Cs, Rb, K, and Na. B is chosen from Li, K, and Na. C is chosen from athe rare earth elements, Al, and Ga. M is chosen from the alkaline earth elements. X is chosen from F, Cl, Br, and I, and y represents the atomic fraction of substitution of C by M and is in the range extending from 0 to 0.05. The melt bath can be in contact with the material containing A and B in such a way that 2s/r is above 1. The process shows an improved fabrication yield. The crystals formed therefrom can have improved scintillation properties.

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Fontenay-sous-Bois, France

Samuel Blahuta