University of Massachusetts

Samson Kh Mil'shtein

Joel M Therrien

John Palma

Jason Pinsonnault

Michael Baier

Shixian Sui

Carl Buzawa

Zachary Durkee

Anup Pillai

Alex Gribov

Ameya Shendye

Anas Dahany

Craig M LaBrecque

Christopher Liessner

Christopher Leger

Carlos A Gil

Sergey Nabokin

The present invention relates generally to a system and methods that facilitates the identification of an individual through the use of data. Certain more particular embodiments of the present invention facilitate the contactless acquisition and processing of biometric data for identification purposes from a biometric source. One preferred embodiment of the present invention of the system includes an apparatus by which is sized and shape to capture of one or more images of an portion of individual for processing and identification purposes. Advantageously, certain embodiments of the present invention facilitate the enrollment of one or more individuals for verification and identification purposes through the use of the data developed from the one or more captured images.

System and methods for contactless biometrics-based identification

Methods and/or systems for scanning biometric objects and compiling 2-dimensional digital images thereof, such images as can provide enhanced resolution, with reduced distortion.

Circumferential contact-less line scanning of biometric objects

A field effect transistor (FET) having at least two independently biased gates can provide uniform electric field in the channel region of the FET. The same AC voltage may be applied to each gate for modulating the FET. One of the gates is positioned closer to the channel region than the other gate. Such a FET allows tailoring the electric field in the channel region of the FET so that it is substantially uniform. The FET exhibits desirable performance characteristics, including having a constant transconductance.

Field effect transistor with independently biased gates

A guide can provide proper registration of an object such as a hand above a scanner device for imaging. The guide can include windows or slits so that the scanner device can produce an image such as a finger or palm in a natural state rather than being pressed against, for example, a flat surface such as glass. Thus, registration of a palm and/or a finger in the guide can be used to produce non-distorted high quality images of biometric patterns in their natural 3-dimensional state.

Adjustable guide for viewing biometric surface patterns

A method and apparatus for computing correlating images for image recognition is provided. In particular, the method is used to compare images of a biometric object to authorize an individual or verify whether an individual is the person he claims to be. The biometric objects may include fingerprints, hand or palm prints, and retina scans. The method uses a deviation of symmetry of correlation functions to determine whether the images are of a same object.

Method of correlation of images in biometric applications

A transistor device includes a gate region disposed adjacent to a semiconductor substrate such that a low impedance channel is formed between a source region and drain region of a transistor device when a voltage is applied to its gate. The drain region of the device can be disposed aside the gate region on a common surface of the semiconductor substrate. The source region of the device also can be disposed adjacent to the substrate but on a side of the semiconductor substrate opposing the drain and/or gate regions. Based on this topology, a transistor device can be fabricated with a buried source to enhance its operating characteristics such as switching speed.

Transistor device including buried source

A uniform tailored electrical field in a multigate field effect D-mode transistor is automatically provided by a feedback circuit which couples drain bias voltages to the gates of a multigate transistor to bias the gates incrementally such that the highest voltage is applied to the gate nearest the drain while the lowest voltage is applied to the gate nearest the source. E-mode multigate FET's carry higher gate voltage on the gate close to the source compared to a gate voltage on a last gate, located close to the drain. The proper distribution of gate voltages improves the transconductance G.sub.m of the transistor and decreases gate capacitance C.sub.gs, which increases the speed of operation of a multigate FETs.

Tailored field in multigate FETS

A method for testing a semiconductor device wherein an image produced from secondary electron emissions generated by exposing a cross section of the device to a beam of electrons with such device being in a first biased condition, preferably an unbiased condition, is digitally recorded in a memory of a digital computer. An image is produced from secondary electron emissions generated by exposing a cross section of the device to a scanning beam of electrons with such device being in a second biased condition is digitally recorded in the memory of the digital computer. The recorded images are digitally subtracted one from the other in the digital computer to produce a difference image. The digital computer digitally calculates a quantitative measure of voltage distribution across the exposed cross section from two regions in the difference image having different degrees of secondary electron emissions. The digital computer displays one of the digitally recorded images on a video display. The other one of the digitally recorded images is subsequently displayed on the video display and the identifiable regions of the two displayed images are identifiable on both displayed images.

Growing community of inventors

Chelmsford, MA, United States of America

Samson Kh Mil'shtein