Qualcomm Incorporated

Samrat Sinharoy

Rakesh Vattikonda

De Lu

Ramaprasath Vilangudipitchai

Venkat Narayanan

Rui Chen

Seung Hyuk Kang

Ravindraraj Ramaraju

Kamesh Medisetti

Bo Pang

Smeeta Heggond

Gudoor Reddy

Anil Kumar Koduru

A cell on an IC includes a first set of Mlayer interconnects coupled to a first voltage, a second set of Mlayer interconnects coupled to a second voltage different than the first voltage, and a MIM capacitor structure below the Mlayer. The MIM capacitor structure includes a CTM, a CBM, and an insulator between portions of the CTM and the CBM. The first set of Mlayer interconnects is coupled to the CTM. The second set of Mlayer interconnects is coupled to the CBM. The MIM capacitor structure is between the Mlayer and an Mlayer. The MIM capacitor structure includes a plurality of openings. The MIM capacitor structure is continuous within the cell and extends to at least two edges of the cell. In one configuration, the MIM capacitor structure extends to each edge of the cell.

MIMCAP architecture

In certain aspects, a circuit includes a dynamic differential logic gate having first and second outputs, and a first static differential logic gate having first and second outputs, and first and second inputs coupled to the first and second outputs, respectively, of the dynamic differential logic gate. The dynamic differential logic gate is configured to receive a clock signal and to preset both the first and second outputs of the dynamic differential logic gate to a first preset value during a first phase of the clock signal. The first static differential logic gate is configured to preset both the first and second outputs of the first static differential logic gate to a second preset value when the first preset value is input to both the first and second inputs of the first static differential logic gate.

Method and apparatus for differential power analysis (DPA) resilience security in cryptography processors

In one embodiment, a voltage level shifter includes a first p-type metal-oxide-semiconductor (PMOS) transistor having a gate configured to receive an input signal in a first power domain, and a second PMOS transistor, wherein the first and second PMOS transistors are coupled in series between a supply voltage of a second power domain and a node. The voltage level shifter also includes an inverter having an input coupled to the node and an output coupled to a gate of the second PMOS transistor, and a first n-type metal-oxide-semiconductor (NMOS) transistor having a gate configured to receive the input signal in the first power domain, wherein the first NMOS transistor is coupled between the node and a ground.

High speed voltage level shifter

In an aspect of the disclosure, a method and an apparatus are provided. The apparatus is a register array including first and second flip-flop latch arrays. The first flip-flop latch array includes a first set of master latches, a first set of slave latches coupled to the first set of master latches, and a first address port. The second flip-flop latch array includes a second set of master latches, a second set of slave latches coupled to the second set of master latches, and a second address port. The register array includes an address counter, coupled to the first flip-flop latch array and the second flip-flop latch array. The address counter is shared by the first flip-flop latch array and the second flip-flop latch array and configured to address, in parallel in a test mode, the first flip-flop latch array through the first address port and the second flip-flop latch array through the second address port.

Apparatus for design for testability of multiport register arrays

In one embodiment, a voltage level shifter includes a first NOR gate having a first input configured to receive a first input signal in a first power domain, a second input configured to receive an enable signal in a second power domain, a third input, and an output. The voltage level shifter also includes a second NOR gate having a first input configured to receive a second input signal in the first power domain, a second input configured to receive the enable signal in the second power domain, a third input coupled to the output of the first NOR gate, and an output coupled to the third input of the first NOR gate. The first and second NOR gates are powered by a supply voltage of the second power domain.

Growing community of inventors

San Diego, CA, United States of America

Samrat Sinharoy