Qualcomm Incorporated

Samit Sengupta

Ming Cai

Chock Hing Gan

Pr Chidambaram

Bin Yang

Ravi Mahendra Todi

John Jianhong Zhu

Shashank Sureshchandra Ekbote

Youn Sung Choi

Giridhar Nallapati

Anil Chowdary Kota

Da Yang

Jihong Choi

P R Chidambaram

Fadoua Chafik

A method for repairing logic design includes inserting primary logic gates in a primary logic design path of a logic chip. The method also includes inserting alternative logic gates in an alternate logic design path of the logic chip. The alternate logic design path and the primary logic design path are coupled to multiple fuses. The potentially defective design is repaired by selecting between the alternate logic design path and the primary logic design path with the fuses when the logic design is defective.

Fuse-based logic repair

Aspects for reducing or avoiding mechanical stress in static random access memory (SRAM) strap cells are disclosed herein. An exemplary SRAM strap cell includes a P-type doped well (Pwell) tap electrically coupled to a first supply rail to distribute a first supply voltage to a Pwell region of corresponding SRAM bit cell rows. The SRAM strap cell also includes an N-type doped well (Nwell) tap electrically coupled to a second supply rail to distribute a second supply voltage to an Nwell region of corresponding SRAM bit cell rows. In one exemplary aspect, the Nwell tap can include multiple supply contacts used to couple the second supply rail to the SRAM strap cell to reduce mechanical stress in the Nwell tap. In another exemplary aspect, the Pwell tap can include non-active gates disposed across multiple Fins to stabilize the Fins and reduce or avoid mechanical stress in the Pwell tap.

Reducing or avoiding mechanical stress in static random access memory (SRAM) strap cells

A method includes forming a first gate of a first transistor, the first gate having a first length. The first transistor is located in a first core. The method also includes forming a second gate of a second transistor, the second gate having a second length that is shorter than the first length. The second transistor is located in a second core. The first core is located closer to a center of a semiconductor die than the second core. The second transistor and the first transistor are corresponding transistors.

System and method of varying gate lengths of multiple cores

In a particular embodiment, a semiconductor device includes a high mobility channel between a source region and a drain region. The high mobility channel extends substantially a length of a gate. The semiconductor device also includes a doped region extending from the source region or the drain region toward the high mobility channel. A portion of a substrate is positioned between the doped region and the high mobility channel.

Semiconductor device having high mobility channel

A method includes forming a first poly-silicon gate of a first transistor, the first poly-silicon gate having a first length. The first transistor is located in a first core. The method also includes forming a second poly-silicon gate of a second transistor, the second poly-silicon gate having a second length that is shorter than the first length. The second transistor is located in a second core. The first core is located closer to a center of a semiconductor die than the second core.

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San Diego, CA, United States of America

Samit Sengupta