Meta Platforms Technologies, LLC

Samir Mezouari

Andrea Pinos

Wei Sin Tan

John Lyle Whiteman

Jun-Youn Kim

Mohsin Aziz

Abdul Shakoor

Xiang Yu

James Walker Carswell

Kathleen Bonnie Vinden

Sean Denis Connor

A micro-light emitting diode (micro-LED) device includes a plurality of semiconductor epitaxial layers that includes a quantum well layer configured to emit light. The micro-LED device also includes an array of electrodes for an array of micro-LEDs, the array of electrodes coupled to the plurality of semiconductor epitaxial layers. The micro-LED device further includes an insulator grid coupled to the plurality of semiconductor epitaxial layers and positioned in regions between individual electrodes of the array of electrodes, and a gate grid coupled to the insulator grid and configured to apply an electric field through the insulator grid to the plurality of semiconductor epitaxial layers in the regions between the individual electrodes of the array of electrodes to electrically isolate the plurality of semiconductor epitaxial layers into individual micro-LEDs of the array of micro-LEDs.

Micro-LED with field-effect isolation

Disclosed herein are a light source for a display system and methods of fabricating the light source. The light source includes a backplane wafer including a first bonding layer that includes an array of pixel contact pads in a first dielectric layer; a second bonding layer including an array of small metal contact pads in a second dielectric layer; and an array of mesa structures on the second bonding layer and configured to emit light. The second dielectric layer is bonded to the first dielectric layer such that each pixel contact pad of the array of pixel contact pads is in contact with two or more small metal contact pads that are electrically coupled to a same mesa structure of the array of mesa structures.

Alignment-free micro-display architecture

A light source comprises a backplane wafer with electrical circuits fabricated thereon, and an array of LEDs coupled to the backplane wafer. Each LED of the array of LEDs comprises a mesa structure including semiconductor epitaxial layers and characterized by inwardly tilted mesa sidewalls, a high-refractive index material region (e.g., with a refractive index greater than about 1.75, such as equal to or greater than a refractive index of the semiconductor epitaxial layers) surrounding the semiconductor epitaxial layers of the mesa structure and including outwardly tilted sidewalls, and a reflective layer on the outwardly tilted sidewalls of the high-refractive index material region. In one example, each LED of the array of LEDs also include a passivation layer on the inwardly tilted mesa sidewalls of the mesa structure.

Microdisplay architecture with light extraction efficiency enhancement

A light emitting diode includes an n-type semiconductor layer including a pit structure formed therein, active layers grown only on sidewalls of the pit structure and configured to emit light, and a p-type semiconductor layer on the active layers and at least partially in the pit structure. In one embodiment, the pit structure is characterized by a shape of an inverted pyramid. The pit structure is formed in the n-type semiconductor layer by, for example, etching the n-type semiconductor layer using an etch mask layer having apertures with slanted sidewalls, or growing the n-type semiconductor layer on a substrate through a mask layer having an array of apertures.

Semipolar micro-LED

A light source includes an array of micro-light emitting diodes (micro-LEDs), an array of micro-lenses, and a bonding layer bonding the array of micro-lenses to the array of micro-LEDs. Each micro-LED of the array of micro-LEDs includes a first mesa structure formed in a plurality of semiconductor layers. The array of micro-lenses is bonded to a first semiconductor layer of the plurality of semiconductor layers by the bonding layer. The first semiconductor layer includes an array of second mesa structures formed therein. The first mesa structure and the second mesa structure are on opposite sides of the plurality of semiconductor layers. Each second mesa structure of the array of second mesa structures is aligned with a respective micro-lens of the array of micro-lenses and the first mesa structure of a respective micro-LED of the array of micro-LEDs.

Micro-LED light extraction efficiency enhancement

A display device includes a plurality of light emitting diodes (LEDs) having walls that extend through a transparent semiconductor layer and beyond the surface of the transparent semiconductor layer. Each of the walls surrounds at least part of each of the plurality of LEDs to collimate the light emitted by the plurality of LEDs. In some embodiments, the walls collimate the light emitted by the LEDs by reflecting the light or absorbing a portion of the light. The display device may further include an array of optical lenses that faces the surface of the transparent semiconductor layer to further collimate the light emitted from the LEDs.

Growing community of inventors

Swindon, United Kingdom

Samir Mezouari