Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Murata Manufacturing Co., Ltd.

Commissariat a L'energie Atomique

Stmicroelectronics S.a.

Centre National De La Recherche Scientifique

Universite Claude Bernard – Lyon1

Institut National Des Sciences Appliquees De Lyon

Ecole Centrale De Lyon

Sami Oukassi

Steve Martin

Raphael Salot

Raphaël Salot

Christophe Dubarry

Nicolas Dunoyer

Gabriel Molas

Arnaud Bazin

Ghislain Despesse

Frédéric Voiron

Christophe Secouard

Johnny Amiran

Valentin Sallaz

Philippe Coronel

Xavier Baillin

Jean Brun

Lucie Le Van-Jodin

Severine Poncet

Gaël Pillonnet

Philippe Pantigny

Frederic Le Cras

Frédéric Gaillard

Frédéric Le Cras

Jean-Philippe Colonna

Daeseok Lee

Sylvain Nizou

Hélène Porthault

Paola Trotti

Alain Toffoli

Francoise Geffraye

Michaël Roffat

Samir Guerroudj

Pascal Faucherand

Lucie Jodin

Philipp Achatz

Carlos-Augusto Berlitz

An assembly able to deliver an output current, includes N electrical energy storage or production cells of rank i, where N≥2, being able to supply a maximum current Iat all times t; a management circuit for managing the electrical energy storage or production cells, wherein, with the cells being classed according to their rank i in decreasing priority of use, the management circuit comprises means for addressing at least the cell of rank 1 or the cells according to their rank i and according to the following criteria: the cell of rank 1 is addressed on its own as long as it is able to supply the output current I<I; the cell of rank 1 is addressed with additionally a number k of cells that are addressed successively according to their rank i, so as to supply the current Is at all times in discharge mode, the number k being such that 2<k≤N and meeting the following conditions:Σand Σ

Assembly of electrical energy storage or production cells comprising a management circuit for managing the cells

A method of fabricating a capacitor that includes: forming a three-dimensional structure over a substrate, the three-dimensional structure having a region with elongated pores extending towards the substrate from a top surface of the three-dimensional structure remote from the substrate or elongated columns extending away from the substrate towards the top surface of the three-dimensional structure remote from the substrate; forming a first electrode layer over a surface of the region of the three-dimensional structure, the first electrode conformal to the surface of the region; forming an intermediate layer over the first electrode layer; and forming a second electrode layer over the intermediate layer, the second electrode layer conformal to the intermediate layer, wherein forming the intermediate layer includes: forming a solid-state electrolyte layer partially conformal to the first electrode layer; and forming a dielectric layer conformal to the first electrode layer.

Low defect high capacitance thin solid electrolyte capacitor and method of fabrication thereof

A memory comprising: a resistive-switching element having first and second electrodes separated by a layer of insulator; an energy storage component or load coupled to the resistive-switching element via a first switch; and a control circuit configured: to program the resistive-switching element to have a set state, wherein, in the set state, a filament forms a conducting path between the first and second electrodes; and, following a dissolution of the filament, to recover electrical energy, generated by the dissolution of the filament, from one of the first and second electrodes by activating the first switch.

Energy recovery in filamentary resistive memories

An integrated energy storage component that includes a substrate supporting a contoured layer having a region with a contoured surface such as elongated pores. A stack structure is provided conformally over the contoured surface of this region. The stack is a single or repeated instance of MOIM layers, or MIOM layers, the M layers being metal layers, or a quasi-metal such as TiN, the O layers being oxide layers containing ions, and the I layer being an ionic dielectric. The regions having a contoured surface may be formed of porous anodized alumina.

Integrated energy storage component

A method for testing at least one energy micro-storage device includes an anode made of metallic lithium formed by electrodeposition of ions on a metal inert to lithium ions, the method comprising a succession of steps during the manufacture of said anode: a step of measuring the initial voltage OCV of the energy micro-storage device; a first charging step, comprising applying a current, measuring the voltage and the internal resistance of the device in order to verify the compliance of the measurements on a very low lithium layer thickness formed at the anode; a second charging stabilization step, comprising applying a current and measuring the voltage of the device in order to verify the compliance of the measurements on a low lithium layer thickness formed at the anode; a retention step with a zero current applied and measuring the voltage in order to confirm the compliance of the energy micro-storage device. A system for implementing the method is also provided.

Method for testing one or a plurality of microbattery devices, and system implementing the testing method

An energy storage device includes a substrate having a portion that is optically transparent in a predefined range of wavelengths, and at least one electrochemical energy storage system comprising, as from a face of the transparent portion, a stack having successively a first current collector, a first electrode, an electrolyte, a second electrode and a second current collector, the stack being covered partially by a cover characterised in that wherein at least one part of the cover has a coefficient of light absorbance greater than or equal to 80%, and preferably greater than 90%.

Energy storage device

An electrode, in particular for micro-batteries, produced in a plurality of layers with intermediate steps of masking a first layer leaving some parts of the latter exposed in order next to produce a removal of material eliminating defects. After removal of the masking layer, the second layer can be formed. Other layers can then follow in the same way.

Storage device and manufacturing method

The method for fabricating an electrochemical device includes the following successive steps: a first stack successively including a first electrode and an electrically insulating electrolyte having a first main surface in contact with the first electrode and an opposite second main surface; a polymerisation step of the electrolyte so as to define at least a first area presenting a first degree of cross-linking and a first cross-linking density and a second area presenting a second degree of cross-linking different from the first degree of cross-linking and/or a second cross-linking density different from the first cross-linking density, said at least first and second areas connecting the first main surface with the second main surface; and placing the second electrode in contact with the electrolyte.

Method for fabricating an electrochemical device and electrochemical device

The invention relates to an energy storage device including at least one block having n energy storage units, where n&#x2265;2; a charge and discharge management circuit electrically linked to the n storage units and making it possible to alternately connect all of the energy storage units of one and the same block to one another; and the block having a defined block voltage between the low potential of the first energy storage unit and the high potential of the nth energy storage unit. The charge and discharge management circuit includes: first means for triggering the toggling from a parallel mode to a series mode and second means for triggering the toggling from the series mode to the parallel mode.

Electrical energy storage device capable of being recharged under a first voltage and of recovering its energy under a second voltage

The present invention relates to a method for producing a microelectronic device successively comprising:

Realization of a microelectronic device collector

This invention relates to a microelectronic device comprising: a first support, a second support, first respective faces of the first support and second support being arranged opposite, and a sealing layer between said first faces, characterized in that the sealing layer comprises at least one layer of an ionic conductive material of formula LiPON, with x strictly greater than 0 and less than or equal to 4.5, y strictly greater than 0 and less than or equal to 1, z strictly greater than 0 and less than or equal to 5.5, w greater than or equal to 0 and less than or equal to 1.

Microelectronic device

A solution for using elementary electrochemical components, manufactured from the same arrangement of materials and incorporated in a single electronic circuit, for information storage or for energy storage, is presented. Electrochemical components incorporating a first electrode, a second electrode and an active area between the two, can, by the application of different voltages for switching from a highly resistive state to a weakly resistive state or for switching from a state having one given electromotive force to a state having another electromotive force, be used respectively as a memory or as a battery.

Method for using electrochemical components for storage of energy and information and associated electronic circuit

A semiconductor component includes a first electrode, designated flat electrode, defining a plane; a second electrode, designated active electrode, separated from the first electrode by an electrolyte layer; a pillar, designated vertical pillar, extending essentially along an axis perpendicular to the plane defined by the flat electrode, the pillar including a third electrode, designated vertical electrode and an information storage layer, the information storage layer covering a surface of the vertical electrode; the flat electrode and the vertical pillar being laid out so as to form a memory point. In addition, the materials of the active electrode and the electrolyte layer are chosen so as to form an energy storage zone with the flat electrode.

Semiconductor memory component integrating a nano-battery, semiconductor device including such a component and method using such a device

An electrochemically actuatable electronic component comprises: a substrate; at least one first and one second actuating electrodes; at least one first and one second measuring electrodes; at least one storing electrode configured to free ions under the action of the actuating electrodes; at least one ionic conductor able to conduct the ions and that is located in a region placed between the measuring electrodes; a device suitable for: applying a voltage or a current between the first and second actuating electrodes to allow the migration of ions from the storing electrode to the first actuating electrode forming thereon an electrochemical deposition through the ionic conductor and for measuring, between the first and second measuring electrodes, a modification of at least one characteristic of the region placed between the first and second measuring electrodes, to determine at least one characteristic of the electronic component.

Electrochemically actuatable electronic component and process for producing the actuatable electronic component

An encapsulation device comprises at least one assembly containing particles comprising at least a first material. The assembly has an open porosity. The particles: are distributed over a geometric structure that has a degree of compactness of said particles of greater than around 50% and preferably of greater than 60%, and are covered conformally by at least one layer referred to as an infiltration layer; the thickness of at least the infiltration layer closing off the porosity of the assembly comprising the particles covered by at least the layer, in the form of pores that are not connected to one another. A process for producing the encapsulation device is also provided.

Growing community of inventors

Saint-Egreve, France

Sami Oukassi