Seagate Technology Incorporated

Sameh Hassan

Marcus Winston Ormston

Mark Thomas Kief

Wonjoon Jung

Kevin Anthony McNeill

Adam Andrzej Lapicki

YuQing Du

Denis O'Donnell

Robert William Lamberton

Zhiran Wang

Yuqing Du

Alexey Dobrynin

Gabriel McCafferty

Emeline Hassen

A multi-layer barrier and method of formation. The method includes applying oxidation to a top of a reference layer, and depositing a plurality of different metal layers over the reference layer. The method also includes providing different oxidation doses at different temperatures to different layers of the plurality of metal layers. The method further includes performing an annealing operation after depositing at least two of the plurality of different metal layers.

Multilayer barrier and method of formation

A data reader may consist of at least a magnetoresistive stack positioned on an air bearing surface. A portion of the magnetoresistive stack may be set to a first fixed magnetization by a pinning structure separated from the air bearing surface by a front shield that is set to a second fixed magnetization by a biasing structure. The front shield may be separated from the biasing structure by a coupling structure.

Data reader with front shield coupling structure

A read sensor that includes a free layer having a magnetization that changes according to an external magnetic field. The read sensor also includes an additional magnetic layer and a non-magnetic layer. The non-magnetic layer may include a corrugated surface facing the additional magnetic layer. The corrugated surface is configured to enhance uniaxial anisotropy in the read sensor.

Magnetoresistive sensor with enhanced uniaxial anisotropy

A read sensor having a bearing surface and an antiferromagnetic (AFM) layer recessed from the bearing surface. The read sensor includes a synthetic antiferromagnetic (SAF) structure over the AFM layer. The SAF structure includes a recessed lower pinned layer, an upper pinned layer, a reference layer and a stabilization feature. The stabilization feature may include deliberate reduction of the antiferromagnetic coupling energy density between the upper pinned layer and the reference layer, so that it becomes lower than the first energy density of antiferromagnetic coupling between the upper pinned layer and the lower pinned layer. The stabilization feature may alternatively include an intermediate pinned layer between the lower pinned layer and the upper pinned layer. The intermediate pinned layer is antiferromagnetically coupled to both the lower pinned layer and the upper pinned layer, and at least a portion of the intermediate pinned layer is recessed behind the bearing surface.

Magnetoresistive sensor with recessed antiferromagnetic layer and stabilization feature

A read sensor and fabrication method thereof. The method includes forming a bottom stack that includes an antiferromagnetic (AFM) layer, a lower ferromagnetic stitch layer above the AFM layer and a sacrificial cap layer on the lower ferromagnetic stitch layer. The sacrificial cap layer is formed of a material that alloys magnetically with the lower ferromagnetic stitch layer. The method further includes substantially removing the sacrificial cap layer. After substantially removing the sacrificial layer, an upper ferromagnetic stitch layer is deposited on the lower ferromagnetic stitch layer of the bottom stack to form a stitch interface that provides relatively strong magnetic coupling between the lower ferromagnetic stitch layer of the bottom stack and the upper ferromagnetic stitch layer.

Recessed AFM stitch interface engineering

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Londonderry, United Kingdom

Sameh Hassan