Spansion Llc.

Sameer Wadhwa

Bhimachar Venkatesh

Michael Achter

Takao Akaogi

Method and apparatus are provided for fast rail-to-rail voltage comparison. A rail-to-rail voltage comparator for indicating one of two states with an output signal in response to an input signal is provided comprising an input stage having an input configured to receive the input signal and having an output, and an amplification circuit having an input coupled to the output of the input stage. The input stage comprises a first differential amplifier having a first input-voltage range and configured to produce a first current based on the input signal, a second differential amplifier having a second input-voltage range and configured to produce a second current based on the input signal, and a summing circuit having a first input coupled to the first differential amplifier and having a second input coupled to the second differential amplifier. The first input-voltage range overlaps the second input-voltage range. The summing circuit is configured to produce a first voltage at the output of the input stage based on a sum of the first current and the second current. The amplification circuit is configured to incrementally amplify the first voltage to a second voltage and further configured to produce the output signal having the second voltage. The second voltage indicates one of the two states.

Fast rail-to-rail voltage comparator and method for rail-to-rail voltage comparison

A sense amplifier includes a reference voltage generator for generating a reference output voltage and a core output voltage generator for generating a core output voltage. The core output voltage generator includes a core front-end stage and a core back-end stage or includes a plurality of amplifier transistors each conducting a portion of a core current through a current conducting device such as core cell. The sizes and/or connections of transistors of such components result in high voltage swing and thus high sensitivity of the sense amplifier.

Sense amplifiers with high voltage swing

The present invention pertains to a circuit arrangement that, in one example, facilitates reading or determining an amount of current that flows through a memory cell when one or more voltages are applied to the cell. The amount of current resulting from the applied voltages is a function of the amount of charge stored within the cell, among other things, and the amount of stored charge represents information stored within the cell. As such, reading the resulting current allows data stored within the cell to be accessed and retrieved. It will be appreciated however, that use of the circuitry disclosed herein is not limited to memory applications. Rather, it can be used in any application where current sensing is required along with a regulated supply voltage.

Current sensing architecture for high bitline voltage, rail to rail output swing and Vcc noise cancellation

A circuit is disclosed that compensates for changes in temperature as well as for fluctuations in a supply voltage (Vcc) so that voltage reference values generated thereby are maintained at substantially constant levels irrespective of changes in temperature or fluctuations in supply voltage. The circuit is also configured to produce a wide range of voltage reference values so that it can independently service the needs of many different applications. Additionally, the circuit is designed using meal oxide semiconductor (MOS) technology, as opposed to more conventional bipolar technology, so that it 'settles down' or generates reference values relatively quickly.

Fast wide output range CMOS voltage reference

The present invention facilitates more accurate data reads by compensating for parasitic behavior&#x2014;thus regulating the voltage at the drain of a core memory cell rather than at the output of a sensing circuit. More particularly, respective voltages at one or more nodes, such as the start of a bitline at a sensing circuit, for example, are adjusted to compensate for voltage drops that may occur due to parasitic behavior. Maintaining the substantially constant voltage levels at core memory cells allows comparisons to be made under ideal conditions while reducing the side leakages in virtual ground schemes. This mitigates margin loss and facilitates more reliable data sensing.

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Santa Clara, CA, United States of America

Sameer Wadhwa