Nitronex Corporation

International Rectifier Corporation

Infineon Technologies Americas Corp.

Sameer Singhal

Allen W Hanson

Jerry Wayne Johnson

Robert Joseph Therrien

Kevin J Linthicum

Edwin Lanier Piner

John Claassen Roberts

Pradeep Rajagopal

Walter H Nagy

James W Cook, Jr

Ricardo M Borges

Jeffrey D Brown

Apurva D Chaudhari

Andrei Vescan

Chul Hi Park

Andrew B Edwards

Quinn Don Martin

Isik C Kizilyalli

Robert J Therrien

Gallium nitride material devices and methods associated with the same. In some embodiments, the devices may be transistors which include a conductive structure connected to a source electrode. The conductive structure may form a source field plate which can be formed over a dielectric material and can extend in the direction of the gate electrode of the transistor. The source field plate may reduce the electrical field (e.g., peak electrical field and/or integrated electrical field) in the region of the device between the gate electrode and the drain electrode which can lead to a number of advantages including reduced gate-drain feedback capacitance, reduced surface electron concentration, increased breakdown voltage, and improved device reliability. These advantages enable the gallium nitride material transistors to operate at high drain efficiencies and/or high output powers. The devices can be used in RF power applications, amongst others.

Methods of manufacturing gallium nitride devices

Gallium nitride material devices and associated methods

Gallium nitride material devices and methods associated with the devices are described. The devices may be designed to provide enhanced thermal conduction and reduced thermal resistance. The increased thermal conduction through and out of the gallium nitride devices enhances operability of the devices, including providing excellent RF operation, reliability, and lifetime.

Thermal designs of packaged gallium nitride material devices and methods of packaging

Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit the majority of the output signal within a specific transmission channel (defined in terms of frequency), while minimizing transmission in adjacent channels. This ability gives the transistors excellent linearity which results in high signal quality and limits errors in transmitted data. The transistors may be designed to achieve low ACPR values (a measure of excellent linearity), while still operating at high drain efficiencies and/or high output powers. Such properties enable the transistors to be used in RF power applications including third generation (3G) power applications based on W-CDMA modulation.

Gallium nitride material transistors and methods associated with the same

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Apex, NC, United States of America

Sameer Singhal