Asml Netherlands B.v.

Samee Ur Rehman

Patricius Aloysius Jacobus Tinnemans

Simon Gijsbert Josephus Mathijssen

Kaustuve Bhattacharyya

Arie Jeffrey Den Boef

Haico Victor Kok

Roy Werkman

Ralph Brinkhof

Henricus Johannes Lambertus Megens

Yana Cheng

Igor Matheus Petronella Aarts

Stefan Carolus Jacobus Antonius Keij

Chenxi Lin

David Frans Simon Deckers

Simon Philip Spencer Hastings

Davit Harutyunyan

Leendert Jan Karssemeijer

Jeffrey Thomas Ziebarth

Disclosed is a method of improving a measurement of a parameter of interest. The method comprises obtaining metrology data comprising a plurality of measured values of the parameter of interest, relating to one or more targets on a substrate, each measured value relating to a different measurement combination of a target of said one or more targets and a measurement condition used to measure that target and asymmetry metric data relating to asymmetry for said one or more targets. A respective relationship is determined for each of said measurement combinations relating a true value for the parameter of interest to the asymmetry metric data, based on an assumption that there is a common true value for the parameter of interest over said measurement combinations. These relationships are used to improve a measurement of the parameter of interest.

Metrology method and apparatus and computer program

A metrology method relating to measurement of a structure on a substrate, the structure being subject to one or more asymmetric deviation. The method includes obtaining at least one intensity asymmetry value relating to the one or more asymmetric deviations, wherein the at least one intensity asymmetry value includes a metric related to a difference or imbalance between the respective intensities or amplitudes of at least two diffraction orders of radiation diffracted by the structure; determining at least one phase offset value corresponding to the one or more asymmetric deviations based on the at least one intensity asymmetry value; and determining one or more measurement corrections for the one or more asymmetric deviations from the at least one phase offset value.

Metrology method and associated metrology and lithographic apparatuses

A method for determining a correction for an apparatus used in a process of patterning substrates, the method including: obtaining a group structure associated with a processing history and/or similarity in fingerprint of to be processed substrates; obtaining metrology data associated with a plurality of groups within the group structure, wherein the metrology data is correlated between the groups; and determining the correction for a group out of the plurality of groups by applying a model to the metrology data, the model including at least a group-specific correction component and a common correction component.

Method for determining corrections for lithographic apparatus

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Milpitas, CA, United States of America

Samee Ur Rehman