Hynix Semiconductor Inc.

University-Industry Cooperation Group of Kyung Hee University

Sam Young Kim

Geun Su Lee

Jae Chang Jung

Cheol Kyu Bok

Keun Do Ban

Chang Moon Lim

Seung Chan Moon

Jee Youn Lee

Won Wook Lee

Tae Young Yune

Hyung-Hwan Baik

The present invention relates to a pharmaceutical composition for the prevention and treatment of blood-brain barrier disorder and central nervous system diseases containing fluoxetine and vitamin C as active ingredients. Specifically, when low concentration of fluoxetine and vitamin C, which did not show any improved effect on the blood-brain barrier disorder and disruption of blood-spinal cord barrier when administered alone, were mixed and co-administered to an animal model with spinal cord injury and transient global ischemia, the co-administration significantly increased the effect of inhibiting the increase of permeability of blood-spinal cord barrier and the effect of inhibiting MMP-9 activation and the effect of alleviating the influx of blood cells in an animal model with spinal cord injury; and the effect of inhibiting the disruption of blood-brain barrier and the effect of recovering memory in a transient global ischemia animal model, compared to the single administration of fluoxetine or vitamin C at the same concentration. The results indicate the synergy effect and the decrease of side effects by the co-administration of the compound at a low concentration, and thus fluoxetine and vitamin C of the present invention can be effectively used as active ingredients for a pharmaceutical composition for the prevention and treatment blood-brain barrier disorder and central nervous system diseases.

Pharmaceutical composition for preventing and treating central nervous system diseases containing fluoxetine and vitamin C as active ingredients

Disclosed herein are photoresist cleaning solutions useful for cleaning a semiconductor substrate in the last step of a developing step when photoresist patterns are formed. Also disclosed herein are methods for forming photoresist patterns using the solutions. The cleaning solutions of the present invention include HO as a primary component, a surfactant as an additive, and optionally an alcohol compound. The cleaning solution of the present invention has lower surface tension than that of distilled water which has been used for conventional cleaning solutions, thereby improving resistance to pattern collapse and stabilizing the photoresist pattern formation.

Method for forming a photoresist pattern

Disclosed herein is a top anti-reflective coating composition comprising a bissulfone compound, as a photoacid generator, represented by Formula 1 below:  Since the top anti-reflective coating composition dissolves a portion of a photoacid generator present at the top of an underlying photosensitizer, particularly, upon formation of a top anti-reflective coating, it can prevent the top from being formed into a thick section. Therefore, the use of the anti-reflective coating composition enables the formation of a vertical pattern of a semiconductor device.

Top anti-reflective coating composition, method for forming the pattern of a semiconductor device using the same, and semiconductor device comprising the pattern

Photoresist cleaning solutions are used to clean semiconductor substrates before or after an exposing step when photoresist patterns are formed. The cleaning solutions include HO and a nonionic surfactant compound represented by Formula 1. By spraying the disclosed cleaning solutions on a surface of the semiconductor substrate before or after exposing step to form a photoresist pattern, the desired pattern only is obtained and unnecessary patterns generated in undesired regions by ghost images are avoided as excess acid generated by the photoacid generator is neutralized and removed and damage to unexposed portions of the photoresist polymer is avoided. 

Method for pattern formation using photoresist cleaning solution

Cleaning solution for photoresist and method for forming pattern using the same

Disclosed herein is a top anti-reflective coating composition which comprises a photoacid generator represented by Formula 1 below.  Since the top anti-reflective coating composition dissolves a portion of a photoacid generator present at the top of an underlying photosensitizer, particularly, upon formation of a top anti-reflective coating, it can prevent the top from being formed into a thick section. Therefore, the use of the anti-reflective coating composition enables the formation of a vertical pattern on a semiconductor device.

Top anti-reflective coating composition and method for pattern formation of semiconductor device using the same

Disclosed are an organic anti-reflective coating composition which is introduced to top portion of a photoresist and a pattern forming method using the same, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF or 157 nm VUV light source, and more particularly to, an organic anti-reflective coating composition which can protect photoresist from atmospheric amine to minimize a post exposure delay effect, and minimize pattern distortion caused by diffused reflection, i.e., a swing phenomenon, with the improvement of a notching phenomenon and the reduction of reflection rate, and a patterning forming method using the same.

Organic anti-reflective coating composition and pattern forming method using the same

The disclosure is a main row decoder of a semiconductor memory device including: a bank controller for generating an internal RAS signal in response to an active and precharge signal; a first pulse generator for generating a first pulse signal when the internal RAS signal transitions; a second pulse generator for generating a second pulse signal when the internal RAS signal or a self refresh signal transitions; an address latch circuit for latching the least significant bit of a row address in response to the first pulse signal; and a row pre-decoder for decoding outputs of the address latch circuit in response to the second pulse signal.

Growing community of inventors

Icheon-si, South Korea

Sam Young Kim