Samsung Display Co., Ltd.

Samsung Electronics Co., Ltd.

Lg Display Co., Ltd.

Sam-Young Cho

Ki-beom Lee

Jong-Hyun Choung

Hong-Sick Park

Bong-Kyun Kim

Sang-woo Kim

Gyu-po Kim

Hyun-cheol Shin

Won-guk Seo

Sun-Young Hong

In-Bae Kim

Hyun-Cheol Shin

Wang-Woo Lee

Won-Guk Seo

Seung-yeon Han

Shi-Yul Kim

Byeong-Jin Lee

Hong Sick Park

Dae-woo Lee

Sang Gab Kim

Sang-Woo Kim

Wang Woo Lee

Youngmin Moon

Young-woo Park

Jean-Ho Song

Kyoung-Mook Lee

Ji-Young Park

Hongsick Park

Seon-Il Kim

Young-jun Kim

Jae Woo Jeong

Young Joo Choi

Seung Ho Yoon

Nam-Seok Suh

Young Min Moon

Jae-Woo Jeong

Kye-Chan Song

Jong-Il Kim

Seon-II Kim

Do-Won Kim

Ki-Beom Lee

Nam-Seo Kim

Young-Woo Park

Seung-Yeon Han

An etchant composition including 0.5 wt % to 20 wt % of a persulfate, 0.01 wt % to 1 wt % of a fluorine compound, 1 wt % to 10 wt % of an inorganic acid, 0.01 wt % to 2 wt % of an azole-based compound, 0.1 wt % to 5 wt % of a chlorine compound, 0.05 wt % to 3 wt % of a copper salt, 0.01 wt % to 5 wt % of an antioxidant or a salt thereof, based on a total weight of the etchant composition, and water in an amount sufficient for the total weight of the etchant composition to be equal to 100 wt % is disclosed. The etchant composition is suitable for use in forming a metal wiring by etching a metal layer including copper or in fabricating a thin film transistor substrate for a display apparatus.

Etchant composition and methods of fabricating metal wiring and thin film transistor substrate using the same

An etching composition, a method of forming a metal pattern using the etching composition, and a method of manufacturing a display substrate are disclosed. The etching composition includes about 0.1% by weight to about 25% by weight of ammonium persulfate, about 0.1% by weight to about 25% by weight of an organic acid, about 0.01% by weight to about 5% by weight of a chelating agent, about 0.01% by weight to about 5% by weight of a fluoride compound, about 0.01% by weight to about 5% by weight of a chloride compound, about 0.01% by weight to about 2% by weight of an azole-based compound and a remainder of water. Thus, a copper layer may be stably etched to improve a reliability of manufacturing the metal pattern and the display substrate.

Etching composition, method of forming a metal pattern using the etching composition, and method of manufacturing a display substrate

An etchant composition includes ammonium persulfate (((NH))SO), an azole-based compound, a water-soluble amine compound, a sulfonic acid-containing compound, a nitrate-containing compound, a phosphate-containing compound, a chloride-containing compound, and residual water.

Etchant composition and manufacturing method for thin film transistor using the same

An etchant composition includes about 25 percent by weight to about 35 percent by weight of phosphoric acid, about 3 percent by weight to about 9 percent by weight of nitric acid, about 10 percent by weight to about 20 percent by weight of acetic acid, about 5 percent by weight to about 10 percent by weight of a nitrate, about 6 percent by weight to about 15 percent by weight of a sulfonic acid, about 1 percent by weight to about 5 percent by weight of an amine compound including a carboxyl group, about 0.1 percent by weight to about 1 percent by weight of a water-soluble amino acid, about 0.01 percent by weight to about 1 percent by weight of an azole compound, and water.

Etchant composition, and method of manufacturing a display substrate using the same

A metal wire etchant including persulfate, a sulfonate, a fluorine compound, an azole-based compound, an organic acid, a nitrate, and a chlorine compound, and a method of making the same.

Metal wire etchant and method of forming metal wire using the same

An etching composition for a copper-containing layer includes about 0.1% to about 30% by weight of ammonium persulfate, about 0.1% to about 10% by weight of a sulfate, about 0.01% to about 5% by weight of an acetate and about 55% to about 99.79% by weight of water. The etching composition having improved stability during storage and an increased capacity for etching.

Etching composition, method of forming a metal pattern and method of manufacturing a display substrate

Exemplary embodiments of the present invention provide a metal wiring etchant. A metal wiring etchant according to an exemplary embodiment of the present invention includes ammonium persulfate, an organic acid, an ammonium salt, a fluorine-containing compound, a glycol-based compound, and an azole-based compound.

Etchant for metal wiring and method for manufacturing metal wiring using the same

An etchant includes about 0.1 percent by weight to about 30 percent by weight of ammonium persulfate (NH)SO, about 0.1 percent by weight to about 10 percent by weight of an inorganic acid, about 0.1 percent by weight to about 10 percent by weight of an acetate salt, about 0.01 percent by weight to about 5 percent by weight of a fluorine-containing compound, about 0.01 percent by weight to about 5 percent by weight of a sulfonic acid compound, about 0.01 percent by weight to about 2 percent by weight of an azole compound, and a remainder of water. Accordingly, the etchant may have high stability to maintain etching ability. Thus, manufacturing margins may be improved so that manufacturing costs may be reduced.

Etchant and method of manufacturing an array substrate using the same

A composition for removing a conductive material and a manufacturing method of an array substrate using the composition, wherein the composition may include a nitric acid of about 3 to 15 wt %, a phosphoric acid of about 40 to 70 wt %, an acetic acid of about 5 to 35 wt %. The composition may further include a chlorine compound of about 0.05 to 5 wt %, a chlorine stabilizer of about 0.01 to 5 wt %, a pH stabilizer of about 0.01 to 5 wt %, and water of residual quantity.

Composition for removing conductive materials and manufacturing method of array substrate using the same

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Anyang-si, South Korea

Sam-Young Cho