Applied Materials, Inc.

Sam Hyungsam Kim

Beom Soo Park

Tuan Anh Nguyen

Juan Carlos Rocha-Alvarez

Sanjeev Baluja

Amit Kumar Bansal

John M White

Soo Young Choi

Kyung-Tae Kim

Robin L Tiner

Makoto Inagawa

Jonghoon Baek

Takayuki Matsumoto

James Hoffman

Billy C Leung

Toshio Kiyotake

William Allan Bagley

Paohuei Lee

Sam-Kyung Kim

Jonathan Erik Larson

Wendell T Blonigan

Akihiro Hosokawa

Carl A Sorensen

Dong-Kil Yim

Emanuel Beer

Yao-Hung Yang

William Norman Sterling

Jae-Chull Lee

Paul Geoffrey Brown

Chih-Yang Chang

Young Jin Choi

Dongchoon Suh

Jaime Munoz

Dong Choon Suh

A sealing member includes a monolithic body including a first portion adjoining a second portion. The first portion forms part of a circle. The second portion includes first and second lobes. Each lobe adjoins the first portion with a concave surface. In one example, each lobe includes a rounded tip, and a convex surface extends from one rounded tip to the other rounded tip.

Sealing member with lip seal

The present disclosure relates to a semiconductor processing apparatus. The processing chamber includes a chamber body and lid defining an interior volume, a substrate support disposed in the interior volume and a showerhead assembly disposed between the lid and the substrate support. The showerhead assembly includes a faceplate configured to deliver a process gas to a processing region defined between the showerhead assembly and the substrate support and an underplate positioned above the faceplate, defining a first plenum between the lid and the underplate, the having multiple zones, wherein each zone has a plurality of openings that are configured to pass an amount of inert gas from the first plenum into a second plenum defined between the faceplate and the underplate, in fluid communication with the plurality of openings of each zone such that the inert gas mixes with the process gas before exiting the showerhead assembly.

Showerhead assembly with multiple fluid delivery zones

The present disclosure relates to a semiconductor processing apparatus. The processing chamber includes a chamber body and lid defining an interior volume, a substrate support disposed in the interior volume and a showerhead assembly disposed between the lid and the substrate support. The showerhead assembly includes a faceplate configured to deliver a process gas to a processing region defined between the showerhead assembly and the substrate support and a underplate positioned above the faceplate, defining a first plenum between the lid and the underplate, the having multiple zones, wherein each zone has a plurality of openings that are configured to pass an amount of inert gas from the first plenum into a second plenum defined between the faceplate and the underplate, in fluid communication with the plurality of openings of each zone such that the inert gas mixes with the process gas before exiting the showerhead assembly.

An electrical ground () of an RF impedance matching network () is connected to a connection area () on the grounded chamber cover () of a plasma chamber. The connection area is offset away from the center of the chamber cover toward a workpiece passageway (). Alternatively, an RF power supply () has an electrically grounded output () that is connected to a connection area () on the chamber cover having such offset. Alternatively, an RF transmission line () has an electrically grounded conductor () that is connected between a grounded output of an RF power supply and a connection area () on the chamber cover having such offset.

Off-center ground return for RF-powered showerhead

Embodiments disclosed herein generally relate to a PECVD apparatus. When the RF power source is coupled to the electrode at multiple locations, the current and voltage may be different at the multiple locations. In order to ensure that both the current and voltage are substantially identical at the multiple locations, an RF bridge assembly may be coupled between the multiple locations at a location just before connection to the electrode. The RF bridge assembly substantially equalizes the voltage distribution and current distribution between multiple locations. Therefore, a substantially identical current and voltage is applied to the electrode at the multiple locations.

Balancing RF bridge assembly

Embodiments disclosed herein generally relate to an apparatus and a method for placing a substrate substantially flush against a substrate support in a processing chamber. When a large area substrate is placed onto a substrate support, the substrate may not be perfectly flush against the substrate support due to gas pockets that may be present between the substrate and the substrate support. The gas pockets can lead to uneven deposition on the substrate. Therefore, pulling the gas from between the substrate and the support may pull the substrate substantially flush against the support. During deposition, an electrostatic charge can build up and cause the substrate to stick to the substrate support. By introducing a gas between the substrate and the substrate support, the electrostatic forces may be overcome so that the substrate can be separated from the susceptor with less or no plasma support which takes extra time and gas.

Substrate support with gas introduction openings

The present invention generally comprises a method and an apparatus for guiding the flow of processing gases away from chamber walls and slit valve opening. By controlling the flow path of the process gases within a processing chamber, undesirable deposition upon chamber walls and within slit valve openings may be reduced. By reducing deposition in slit valve openings, flaking may be reduced. By reducing deposition on chamber walls, the time between chamber cleaning may be increased. Thus, guiding the flow of processing gases within the processing chamber may increase substrate throughput.

Source gas flow path control in PECVD system to control a by-product film deposition on inside chamber

Embodiments of an apparatus for sealing a substrate transfer passage in a chamber are provided. In one embodiment, an apparatus for sealing a substrate transfer passage in a chamber includes an elongated door member coupled to an actuator by a ball joint. The ball joint is configured to allow movement of the door member relative to the lever arm around a center of the ball joint. In one embodiment, a sealing face of the elongated door is curved. In another embodiment, the chamber is one of a chemical vapor deposition chamber, a load lock chamber, a metrology chamber, a thermal processing chamber, or a physical vapor disposition chamber, a load lock chamber, a substrate transfer chamber or a vacuum chamber.

Valve door with ball coupling

An apparatus and method incorporating at least two sensors that detect the presence of a substrate is provided. In one embodiment, a method for transferring a substrate in a processing system is described. The method includes positioning a substrate on an end effector in a first chamber, moving the substrate through an opening between the first chamber and a second chamber along a substrate travel path, and sensing opposing sides of the substrate travel path using at least two sensors positioned proximate to the opening, each of the at least two sensors defining a beam path that is directed through opposing edge regions of the substrate when at least a portion of an edge region traverses the beam path.

Sensors for dynamically detecting substrate breakage and misalignment of a moving substrate

An apparatus and method incorporating at least two sensors that detect the presence of substrate defects, such as breakage or misalignment, along the lengths of at least two parallel edges of a moving substrate. In one embodiment, an apparatus for detecting substrate defects includes a sensor arrangement including at least two sensors that continuously sense a substrate near at least two parallel edges of the substrate as the substrate passes the sensors. In another embodiment, an apparatus for detecting substrate defects includes a robot having a substrate support surface, and a sensor arrangement including at least two sensors that continuously sense a substrate near at least two parallel edges of the substrate during substrate transfer on the substrate support surface. In another embodiment, a method of continuously detecting substrate defects includes positioning at least two sensors to continuously sense a substrate near at least two parallel edges of the substrate as the substrate passes the sensors, and transmitting a signal from each of the at least two sensors to a controller that continuously monitors the signals from the at least two sensors to detect the presence of a substrate defect.

An actuator assembly for a slit valve door is configured to maintain a slit valve in a closed condition notwithstanding a high pressure differential between adjacent chambers that the slit valve isolates from each other. The slit valve door actuator assembly includes an actuator which moves the slit valve door between open and closed positions, and a locking mechanism to keep the slit valve door in a position to seal the slit valve in resistance to high gas pressure against the slit valve door. The locking mechanism may include a hard stop which is selectively movable into position to block retracting movement of the slit valve door.

Slit valve method and apparatus

Embodiments of the invention generally provides an apparatus and method for heating substrates, comprising a heater disposed within a chamber, a plurality of heated supports movably disposed within the chamber to support at least two substrates thereon and a contamination collector disposed in communication with the chamber.

Growing community of inventors

San Ramon, CA, United States of America

Sam Hyungsam Kim