Dnf Co., Ltd.

Sam Dong Lee

Sang Ick Lee

Se Jin Jang

Sung Gi Kim

Joong Jin Park

Jeong Joo Park

Myong Woon Kim

Byeong-il Yang

Sang-Do Lee

Gun-Joo Park

Sang Yong Jeon

A Ra Cho

Haeng Don Lim

Byeong Il Yang

Hee Yeon Jeong

Won Mook Chae

Myoung Woon Kim

Gun Joo Park

The present invention relates to a silicon oxide encapsulation film comprising a metal or a metal oxide, and a manufacturing method therefor. The silicon metal oxide encapsulation film according to the present invention has a high thin film growth rate and low moisture and oxygen permeabilities, thereby exhibiting a very excellent sealing effect even at a low thickness, and the stress strength and refractive index thereof can be controlled, thereby enabling a high-quality silicon metal oxide encapsulation film that is applicable to a flexible display to be readily manufactured.

Silicon metal oxide encapsulation film comprising metal or metal oxide in thin film, and manufacturing method therefor

Provided are a composition for depositing a silicon-containing thin film containing a bis(aminosilyl)alkylamine compound and a method for manufacturing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing the bis(aminosilyl)alkylamine compound capable of being usefully used as a precursor of the silicon-containing thin film, and a method for manufacturing a silicon-containing thin film using the same.

Composition for depositing silicon-containing thin film containing bis(aminosilyl)alkylamine compound and method for manufacturing silicon-containing thin using the same

Provided are a composition for depositing a silicon-containing thin film, containing a trisilylamine compound and a method for producing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing a trisilylamine compound which is capable of forming a silicon-containing thin film at a very high deposition rate at a low temperature to be usable as a precursor of a silicon-containing thin film and an encapsulant of a display, and a method for producing a silicon-containing thin film by using the same.

Composition for depositing silicon-containing thin film and method for producing silicon-containing thin film using the same

Composition for depositing silicon-containing thin film containing bis(aminosilyl)alkylamine compound and method for manufacturing silicon-containing thin film using the same

Provided are a silylamine compound, a composition for depositing a silicon-containing thin film containing the same, and a method for manufacturing a silicon-containing thin film using the composition, and more particularly, to a silylamine compound capable of being usefully used as a precursor of a silicon-containing thin film, a composition for depositing a silicon-containing thin film containing the same, and a method for manufacturing a silicon-containing thin film using the composition.

Silylamine compound, composition for depositing silicon-containing thin film containing the same, and method for manufacturing silicon-containing thin film using the composition

Provided are a novel disilylamine compound, a method for preparing same, and a composition for depositing a silicon-containing thin film including the same. A disilylamine compound of the present invention has excellent reactivity, is thermally stable, and has high volatility, and thus, is used as a silicon-containing precursor, thereby manufacturing a high-quality silicon-containing thin film.

Disilylamine compound, method for preparing the same, and composition for depositing silicon-containing thin film including the same

Composition for depositing silicon-containing thin film including disilylamine compound and method for manufacturing silicon-containing thin film using the same

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Daejeon, South Korea

Sam Dong Lee