Stmicroelectronics S.r.l.

Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno

Other

Consiglio Nazionale Delle Ricerche

Salvatore Lombardo

Piero Fallica

Cosimo Gerardi

Massimo Cataldo Mazzillo

Sebastiano Ravesi

Marina Foti

Giuseppe Ferla

Delfo Nunziato Sanfilippo

Albert Polman

Salvatore Ugo Campisano

Emilio Antonio Sciacca

Gerard Nicolaas Van Den Hoven

Salvatore Coffa

Cristina Tringali

Stella Loverso

Noemi Graziana Sparta

Maria Concetta Nicotra

Angelo Pinto

Rosario Corrado Spinella

Sebania Libertino

Massimo Melanotte

Isodiana Crupi

Noemi Graziana Sparta′

Rosaria Anna Puglisi

Manuela Fichera

Silvestra DiMarco

Nicola Costa

Silvestra Dimarco

An array of Geiger-mode avalanche photodiodes is formed in a die and includes: an internal dielectric structure, arranged on the die; and an external dielectric region arranged on the internal dielectric structure. The external dielectric region is formed by an external material that absorbs radiation having a wavelength that falls in a stop-band with low wavelength and transmits radiation having a wavelength that falls in a pass-band with high wavelength, at least part of the pass-band including wavelengths in the infrared. The internal dielectric structure is formed by one or more internal materials that substantially transmit radiation having a wavelength that falls in the stop-band and in the pass-band and have refractive indices that fall in an interval having an amplitude of 0.4. In the stop-band and in the pass-band the external dielectric region has a refractive index with the real part that falls in the above interval.

Array of Geiger-mode avalanche photodiodes for detecting infrared radiation

Solar thin film modules are provided with reduced lateral dimensions of isolation trenches and contact trenches, which provide for a series connection of the individual solar cells. To this end lithography and etch techniques are applied to pattern the individual material layers, thereby reducing parasitic shunt leakages compared to conventional laser scribing techniques. In particular, there may be series connected solar cells formed on a flexible substrate material that are highly efficient in indoor applications.

Thin film solar cell module including series connected cells formed on a flexible substrate by using lithography

A thin film amorphous silicon solar cell may have front contact between a hydrogenated amorphous silicon layer and a transparent conductive oxide layer. The cell may include a layer of a refractory metal, chosen among the group composed of molybdenum, tungsten, tantalum and titanium, of thickness adapted to ensure a light transmittance of at least 80%, interposed therebetween, before growing by PECVD a hydrogenated amorphous silicon p-i-n light absorption layer over it. A refractory metal layer of just about 1 nm thickness may effectively shield the oxide from the reactive plasma, thereby preventing a diffused defect when forming the p.i.n. layer that would favor recombination of light-generated charge carriers.

Thin refractory metal layer used as contact barrier to improve the performance of thin-film solar cells

Array of geiger-mode avalanche photodiodes for detecting infrared radiation

Thin film solar cell module including series-connected cells formed on a flexible substrate by using lithography

A solar panel may include a first multi-cell thin-film photovoltaic module of a first fabrication type including a transparent support forming a front surface of the panel, a first pair of connection terminals on the transparent support, and first cells of a certain area, being on the transparent support, and being connected in series to the first pair of connection terminals. The solar panel may include a second multi-cell thin-film photovoltaic module of a second fabrication type comprising a support forming a rear surface of the panel, a second pair of connection terminals on the support, and second cells of a certain area, being on the support, and being connected in series to the second pair of connection terminals. The solar panel may further include a pair of panel terminals for connecting the solar panel to an external circuit, the first and second pairs of connection terminals being connected either in series or in parallel, and then connected to the external circuit through the panel terminals, or both connected to a maximum power point tracker and then connected to the external circuit through the panel terminals.

Solar panel having monolithic multicell photovoltaic modules of different types

An embodiment of an array of Geiger-mode avalanche photodiodes, wherein each photodiode is formed by a body of semiconductor material, having a first conductivity type, housing a first cathode region, of the second conductivity type, and facing a surface of the body, an anode region, having the first conductivity type and a higher doping level than the body, extending inside the body, and facing the surface laterally to the first cathode region and at a distance therefrom, and an insulation region extending through the body and insulating an active area from the rest of the body, the active area housing the first cathode region and the anode region. The insulation region is formed by a mirror region of metal material, a channel-stopper region having the second conductivity type, surrounding the mirror region, and a coating region, of dielectric material, arranged between the mirror region and the channel-stopper region.

Array of mutually insulated Geiger-mode avalanche photodiodes, and corresponding manufacturing process

A nanometric device is disclosed for the measurement of the electrical conductivity of individual molecules and their quantum effects having: a substrate surmounted by, in order, a barrier to diffusion layer, an electrically conductive layer, a 'bounder' layer and an electrically insulating layer; and a suitable miniaturized probe; wherein the 'bounder' layer and the electrically insulating layer have at least one nanometric pore formed within, the base of which consists of the electrically conductive layer. A method for the production of a nanometric device for the measurement of the electrical conductivity of individual molecules and their quantum effects, and a method for the measurement of the electrical conductivity and quantum effects of a molecule of interest, are also disclosed.

Nanometric device for the measurement of the conductivity and quantum effects of individual molecules and methods for the manufacture and use thereof

This invention relates to a memory cell which comprises a capacitor having a first electrode and a second electrode separated by a dielectric layer. Such dielectric layer comprises a layer of a semi-insulating material which is fully enveloped by an insulating material and in which an electric charge is permanently present or trapped therein. Such electric charge accumulated close to the first or to the second electrode, depending on the electric field between the electrodes, thereby defining different logic levels.

Memory cell structure integrated on semiconductor

A process fabricates a vertical structure high carrier mobility transistor on a substrate of crystalline silicon doped with impurities of the N type, the transistor having a collector region located at a lower portion of the substrate. The process includes: defining a window in the semiconductor substrate; providing a first implantation of germanium atoms through said window; providing a second implantation of acceptor dopants through said window to define a base region; applying an RTA treatment, or treatment in an oven, to re-construct the crystal lattice within the semiconductor substrate comprising a silicon/germanium alloy; forming a first thin dielectric layer of silicon dioxide by chemical vapor deposition; depositing a second dielectric layer onto said first dielectric layer; depositing a polysilicon layer onto said second dielectric layer; etching away, within the window region, said first and second dielectric layers, and the polysilicon layer, to expose the base region and form isolation spacers at the window edges; and forming an N-doped emitter in the base and window regions. This fabrication process is specially attentive to the formation of the silicon dioxide SiO /Ge Si interface present in vertical structure HBT transistors, if isolation spacers are to be formed. The fabrication process allows the frequency field of application of HBT transistors to be further extended, while eliminating deviations of the base currents from the ideal.

Manufacturing process of a germanium implanted HBT bipolar transistor

An electro-luminescent material and solid state electro-luminescent device comprising a mixed material layer formed of a mixture of silicon and silicon oxide doped with rare earth ions so as to show intense room-temperature photo- and electro-luminescence is described. The luminescence is due to internal transitions of the rare earth ions. The mixed material layer has an oxygen content ranging from 1 to 65 atomic % and is produced by vapor deposition and rare earth ions implant. A separated implant with elements of the V or III column of the periodic table of elements gives rise to a PN junction. The so obtained structure is then subjected to thermal treatment in the range 400.degree.-1100.degree. C.

Electro-luminescent material, solid state electro-luminescent device and

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Catania, Italy

Salvatore Lombardo