Stmicroelectronics S.r.l.

Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno

Sgs-thomson Microelectronics S.r.l.

Co.ri.m.me. Consorzio Per La Ricerca Sulla Microelettronica Nel

Università Degli Studi Di Napoli Federico II

Co.ri.m.me Consorzio Per La Sulla Microelectronica Nel Mezzogiorno

Salvatore Leonardi

Claudia Caligiore

Davide Giuseppe Patti

Roberta Giuffrida

Giovanna Cacciola

Natale Aiello

Salvatore Coffa

Roberto Modica

Salvatore Abbisso

Giuseppe Emanuele Spoto

Giuseppe Antonio Maria Nastasi

Raffaele Zambrano

Delfo Nunziato Sanfilippo

Raffaele Vecchione

Salvatore Scaccianoce

Roberta Zito

Giuseppe Catania

Gianpiero Montalbano

Sergio Palara

Agatino Minotti

Luigi Nicolais

Maria Eloisa Castagna

Valeria Casuscelli

Salvatore Baglio

Giuseppe Arena

Cristian Dall'Oglio

Maria Grazia Maglione

Maria Viviana Volpe

Gianfranco Carotenuto

Luigi La Magna

Giuseppe Mensitieri

Marco Antonio Salanitri

Guglielmo Fortunato

Luigi Mariucci

Andrea Lazzara

Anna Borriello

Davide Bolognesi

Chiara Leo

Massimo Cuscuna

Stefania Calamia

Lidia Maddiona

Floriana Esposito

Simone Angelo Siciliano

Pietro Lizzio

Bruno Ando′

Atanasio LaBarbera

Alberto Mario Piro

Francesca Paola Tramontana

A thermoelectric energy harvesting device including a first thermal-coupling interface, a second thermal-coupling interface, and a membrane. The membrane arranged between the first thermal-coupling interface and the second thermal-coupling interface and connected to the first thermal-coupling interface by a supporting frame. A thermal bridge between the second thermal-coupling interface and a thermal-coupling portion of the membrane. A thermoelectric converter on the membrane configured to supply an electrical quantity as a function of a temperature difference between the thermal-coupling portion of the membrane and the supporting frame.

Thermoelectric energy harvesting device and method of harvesting environmental energy

An embodiment relates to a device integrated on a semiconductor substrate of a type comprising at least one first portion for the integration of at least one microfluidic system, and a second portion for the integration of an additional circuitry. The microfluidic system comprises at least one cavity realized in a containment layer of the integrated device closed on top by at least one portion of a polysilicon layer, this polysilicon layer being a thin layer shared by the additional circuitry and the closing portion of the cavity realizing a piezoresistive membrane for the microfluidic system.

Integrated device of the type comprising at least a microfluidic system and further circuitry and corresponding integration process

A composite product is for an electrode of a fuel cell including a catalyst, an electrically conductive phase which supports such catalyst, a protonically conductive phase, and a porous phase. At least the contact between the catalyst and the electrically and protonically conductive phases, and preferably also the contact of the porous phase with the catalyst and with the electrically and protonically conductive phases, is improved or maximized. Each of the phases is individually continuous, and such phases are continuous with each other.

Porous composite product for the production of a catalytic layer, in particular in fuel cell electrodes

A cartridge for biochemical analysis includes a support, a structure, which is set on the support and contains wells for receiving a solution, and photodetectors on the support, in positions corresponding to respective wells.

Cartridge for biochemical analyses, system for biochemical analyses, and method of carrying out a biochemical process

A process is described for integrating, on an inert substrate, a device having at least one passive component and one active component. The process comprises: deposition of a protection dielectric layer on the inert substrate; formation of a polysilicon island on the protection dielectric layer; integration of the active component on the polysilicon island; deposition of the covering dielectric layer on the protection dielectric layer and on the active component; integration of the passive component on the covering dielectric layer; formation of first contact structures in openings realised in the covering dielectric layer in correspondence with active regions of the active component; and formation of second contact structures in correspondence with the passive component. An integrated device obtained through this process is also described.

Process for integrating on an inert substrate a device comprising at least a passive element and an active element and corresponding integrated device

An electroluminescent device includes at least first and second radiation emitter devices arranged on a common substrate. Each radiation emitter devise includes a first active layer and a second layer of organic material for generating the radiation, respectively. This device includes isolation means of dielectric material which are at least partially interposed between the first and second active layers to electrically isolate the first layer from the second active layer.

Organic electroluminescent device with isolation region for improved light  emission and systems including same

A microfluidic system through which a solution of at least an oxidable compound is fed to a feed manifold of an energy converting electrochemical device includes a flow connector. The flow connector includes a silicon platform having a bottom side and an opposing top side, and through holes extending therethough. The silicon platform includes first and second channels defined on the bottom side for communicating with the through holes. The second channel forms an inlet for the feed manifold of the energy converting electrochemical device when the bottom side of the silicon platform is coupled to a flat coupling area of the device. A micropump module is coupled to the top side of the silicon platform for communicating with the through holes in the first and second channels. First and second supply cartridges are coupled to the top side of the silicon platform for communicating with the through holes in the first channel.

Monocrystalline silicon flow connector and microfluidic system modularly built thereon for feeding a fuel solution to an energy converting device

A process for the production of hydrogen for micro fuel cells, comprises the successive steps of: continuously supplying a catalytic bed with an aqueous solution of sodium borohydride, the catalytic bed being made of at least one metal chosen among cobalt, nickel, platinum, ruthenium with obtainment of hydrogen and of a by-product comprising sodium metaborate, continuously recovering the hydrogen thus obtained and supplying, with said hydrogen as it is as obtained, a micro fuel cell which transforms hydrogen into electric energy. An apparatus provides continuous supply of hydrogen to a micro fuel cell. An integrated system structured for continuously producing and supplying hydrogen to a micro fuel cell and for converting the continuously supplied hydrogen into electric energy.

Process and corresponding apparatus for continuously producing gaseous hydrogen to be supplied to micro fuel cells and integrated system for producing electric energy

A device for producing energy for portable applications including at least one micro fuel cell and a microreactor, having a reaction chamber including a catalyst, for producing hydrogen gas to be fed to the micro fuel cell. The microreactor includes at least one substrate of a composite material for making printed circuits micromachined with printed circuit technology suitable for making the reaction chamber and having a semipermeable membrane on top of it. The substrate and the membrane are connected to the micro fuel cell to make a single body through a single pressure assembly step.

Micro fuel cell and corresponding microreactor, supplied with hydrogen, for producing electric energy

A driving circuit of an OLED diode is inserted between a first and a second voltage reference and having at least one input terminal receiving an input voltage signal and an output terminal for the generation of a driving current of the OLED diode, the driving circuit having at least one driver transistor having a first conduction terminal connected to the first voltage reference, a second conduction terminal connected to the output terminal and a control terminal connected to at least one first capacitor and one second capacitor. The first capacitor is inserted between this control terminal and an inner circuit node and the second capacitor is inserted between the inner circuit node and the second voltage reference, the driving circuitfurther including: a first switch inserted between the input terminal and the inner circuit node; a second switch inserted between the first conduction terminal and control terminal of the driver transistor, and a third switch inserted between the inner circuit node and the second voltage reference, in parallel to the second capacitor, as well as a fourth switch inserted between the first voltage reference and the first conduction terminal of the driver transistor.

Driving circuit for an OLED (organic light emission diode), in particular for a display of the AM-OLED type

The present invention relates to a process for the preparation of a composite polymeric material containing nanometric inorganic inclusions comprising the steps of: mixing a polymer with a thermolytic precursor to provide a homogeneous dispersion of said at least one precursor and of said at least one polymer; subjecting said homogeneous dispersion to heating to provide a molten polymer and thermolytic fission of the precursor, generating the inclusions dispersed in the molten polymer.

Process for the preparation of a composite polymeric material

A process for manufacturing an electronic semiconductor device, wherein a SOI wafer is provided, formed by a bottom layer of semiconductor material, an insulating layer, and a top layer of semiconductor material, stacked on top of one another; alignment marks are formed in the top layer; an implanted buried region is formed, aligned to the alignment marks; a hard mask is formed on top of the top layer so as to align it to the alignment marks; using the hard mask, the top layer is selectively removed so as to form a trench extending up to the insulating layer; there a lateral-insulation region in the trench, that is contiguous to the insulating layer and delimits with the latter an insulated well of semiconductor material; and electronic components are formed in the top layer.

Process for the aligned manufacture of electronic semiconductor devices in a SOI substrate

A process for manufacturing a thin-film transistor device includes forming a dielectric insulation layer on a substrate, forming an amorphous silicon layer on the dielectric insulation layer, crystallizing the amorphous silicon layer, so as to obtain polycrystalline silicon, forming gate structures on the polycrystalline silicon, and forming first doped regions within the polycrystalline silicon laterally with respect to the gate structures. The crystallizing step includes forming first capping dielectric regions on the amorphous silicon layer, and then irradiating the amorphous silicon layer using a laser so as to form active areas of polycrystalline silicon separated by separation portions of amorphous silicon underlying the first capping dielectric regions.

Thin-film transistor (TFT) device

A fuel cell is entirely fabricated on a single monocrystalline silicon substrate, and substantially overcomes leak proofing and wafer bonding difficulties and criticalities while ensuring an intrinsic sturdiness of the planarly integrated functional structure of the fuel cell. The integrated fuel cell is formed in an oxidized porous silicon region on a monocrystalline silicon substrate that is pervious to fluid flow and is electrically nonconductive with the monocrystalline silicon substrate.

Fuel cell planarly integrated on a monocrystalline silicon chip and process of fabrication

A process for realizing TFT devices on a substrate comprises the steps of: forming on the substrate, in cascade, an amorphous silicon layer and a heavily doped amorphous silicon layer, forming a photolithographic mask on the heavily doped amorphous silicon layer provided with an opening, removing the heavily doped amorphous silicon layer through the opening for realizing opposite portions of the heavily doped amorphous silicon layer whose cross dimensions decrease as long as they depart from the amorphous silicon layer, removing the photolithographic mask, carrying out a diffusion and activation step of the dopant contained in the portions of the heavily doped amorphous silicon layer inside the amorphous silicon layer, for realizing source/drain regions of said TFT device.

Process for manufacturing a TFT device with source and drain regions having gradual dopant profile

Growing community of inventors

Aci S. Antonio, Italy

Salvatore Leonardi