Stmicroelectronics S.r.l.

Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno

Université Degli Studi Di Catania

Salvatore Coffa

Maria Fortuna Bevilacqua

Ferruccio Frisina

Luigi Giuseppe Occhipinti

Giuseppe D'Arrigo

Salvatore Leonardi

Vincenzo Vinciguerra

Maria Grazia Maglione

Michele Portico Ambrosio

Francesco Buonocore

Salvatore Castorina

Mariantonietta Monaco

Mario Giuseppe Saggio

Egidio Ragonese

Crocifisso Marco Antonio Renna

Cesare Ronsisvalle

Simona Lorenti

Vito Raineri

Claudia Caligiore

Sebania Libertino

Massimiliano Fiorito

Luigi La Magna

Gianpiero Montalbano

Simone Spataro

Piergiorgio Fallica

Anna Battaglia

Davide Giuseppe Patti

Francesco Rundo

Maria Eloisa Castagna

Salvatore Lombardo

Lucio Renna

Clelia Carmen Galati

Marco Alfio Torrisi

Giuseppe Arena

Natalia Maria Rita Spinella

Michele Calabretta

Giuseppe Emanuele Spoto

Rosario Corrado Spinella

Marco Camalleri

Anna Muscara'

Roberta Giuffrida

Albert Polman

Marco Antonio Salanitri

Guglielmo Fortunato

Luigi Mariucci

Stefania Calamia

Roberta Zito

Massimo Cuscuna

Corrado Spinella

Nicholas Hamelin

Peter Kik

Francesca Paola Tramontana

Riccardo Emanuele Sarpietro

In an embodiment, a method includes: capturing a first image of a power module, the power module including a power electronics circuit, the power electronics circuit including power semiconductor dies; identifying positions of the power semiconductor dies in the first image with a die detection model; extracting second images of the power semiconductor dies from the first image according to the positions of the power semiconductor dies in the first image; and identifying defects of the power semiconductor dies in the second images with a defect detection model, the defect detection model being different from the die detection model.

System and method for power module defect detection

An oscillator circuit includes a total of N (N≥2) class-D oscillator circuits stacked together between a supply voltage node and a reference voltage node. The output ports of adjacent class-D oscillator circuits in the disclosed oscillator circuit are coupled together by capacitors to ensure frequency and phase synchronization for the frequency signals generated by the class-D oscillator circuits. Compared with a reference oscillator circuit formed of a single class-D oscillator circuit, the oscillation amplitude of each of the class-D oscillator circuits in the disclosed oscillator circuit is 1/N of that of the reference oscillator circuit, and the current consumption of the disclosed oscillator circuit is 1/N of that of the reference oscillator circuit.

Capacitively-coupled stacked class-D oscillators for galvanic isolation

An oscillator circuit includes a total of N (N&#x2265;2) class-D oscillator circuits stacked together between a supply voltage node and a reference voltage node. The output ports of adjacent class-D oscillator circuits in the disclosed oscillator circuit are coupled together by capacitors to ensure frequency and phase synchronization for the frequency signals generated by the class-D oscillator circuits. Compared with a reference oscillator circuit formed of a single class-D oscillator circuit, the oscillation amplitude of each of the class-D oscillator circuits in the disclosed oscillator circuit is 1/N of that of the reference oscillator circuit, and the current consumption of the disclosed oscillator circuit is 1/N of that of the reference oscillator circuit.

Capacitively-coupled stacked class-d oscillators for galvanic isolation

A microfluidic diagnostic device () comprising a substrate (); a compatible layer () formed on a first face () of the substrate (); a structural layer (), formed on top of the compatible layer (); a channel (), formed in the structural layer () and limited underneath by the compatible layer (), optically accessible by a first luminous radiation having a first wavelength (&#x3bb;); and a cover layer () made of a material transparent to the first wavelength (&#x3bb;), arranged on top of the structural layer () and sealing the channel () at the top, wherein the compatible layer () has a thickness equal to approximately a quarter of the first wavelength (&#x3bb;) divided by the refraction index of the compatible layer (), or equal to an odd multiple of a quarter of the first wavelength (&#x3bb;) divided by the refraction index of the compatible layer ().

Optically accessible microfluidic diagnostic device

A solar panel may include a first multi-cell thin-film photovoltaic module of a first fabrication type including a transparent support forming a front surface of the panel, a first pair of connection terminals on the transparent support, and first cells of a certain area, being on the transparent support, and being connected in series to the first pair of connection terminals. The solar panel may include a second multi-cell thin-film photovoltaic module of a second fabrication type comprising a support forming a rear surface of the panel, a second pair of connection terminals on the support, and second cells of a certain area, being on the support, and being connected in series to the second pair of connection terminals. The solar panel may further include a pair of panel terminals for connecting the solar panel to an external circuit, the first and second pairs of connection terminals being connected either in series or in parallel, and then connected to the external circuit through the panel terminals, or both connected to a maximum power point tracker and then connected to the external circuit through the panel terminals.

Solar panel having monolithic multicell photovoltaic modules of different types

A process is described for integrating, on an inert substrate, a device having at least one passive component and one active component. The process comprises: deposition of a protection dielectric layer on the inert substrate; formation of a polysilicon island on the protection dielectric layer; integration of the active component on the polysilicon island; deposition of the covering dielectric layer on the protection dielectric layer and on the active component; integration of the passive component on the covering dielectric layer; formation of first contact structures in openings realised in the covering dielectric layer in correspondence with active regions of the active component; and formation of second contact structures in correspondence with the passive component. An integrated device obtained through this process is also described.

Process for integrating on an inert substrate a device comprising at least a passive element and an active element and corresponding integrated device

A method for growing carbon nanotubes having a determined chirality includes fragmenting at least one initial carbon nanotube having a determined chirality to obtain at least two portions of carbon nanotube. Each portion has a free growth end. Atoms of carbon are supplied with an autocatalyst addition of the atoms of carbon at the free growth end of each portion of nanotube to determine an elongation or growth of the nanotube.

Method for growing carbon nanotubes having a predetermined chirality

Fuel cells are formed in a single layer of conductive monocrystalline silicon including a succession of electrically isolated conductive silicon bodies separated by narrow parallel trenches etched through the whole thickness of the silicon layer. Semicells in a back-to-back configuration are formed over etch surfaces of the separation trenches. Each semicell formed on the etch surface of one of the silicon bodies forming an elementary cell in cooperation with an opposite semicell formed on the etch surface of the next silicon body of the succession, is separated by an ion exchange membrane resin filling the separation trench between the opposite semicells forming a solid electrolyte of the elementary cell. Each semicell includes a porous conductive silicon region permeable to fluids, extending for a certain depth from the etch surface of the silicon body, at least partially coated by a non passivable metallic material. Each of the porous and fluid permeable regions communicates with a feed duct of a fuel fluid or of oxygen gas that extends parallel to the etch surface inside the conductive silicon body.

Fuel cell formed in a single layer of monocrystalline silicon and fabrication process

A process for the production of hydrogen for micro fuel cells, comprises the successive steps of: continuously supplying a catalytic bed with an aqueous solution of sodium borohydride, the catalytic bed being made of at least one metal chosen among cobalt, nickel, platinum, ruthenium with obtainment of hydrogen and of a by-product comprising sodium metaborate, continuously recovering the hydrogen thus obtained and supplying, with said hydrogen as it is as obtained, a micro fuel cell which transforms hydrogen into electric energy. An apparatus provides continuous supply of hydrogen to a micro fuel cell. An integrated system structured for continuously producing and supplying hydrogen to a micro fuel cell and for converting the continuously supplied hydrogen into electric energy.

Process and corresponding apparatus for continuously producing gaseous hydrogen to be supplied to micro fuel cells and integrated system for producing electric energy

Described herein is an optically controlled electrical-switch device which includes a first current-conduction terminal and a second current-conduction terminal, and a carbon nanotube connected between the first and the second current-conduction terminals, the carbon nanotube being designed to be impinged upon by electromagnetic radiation and having an electrical conductivity that can be varied by varying the polarization of the electromagnetic radiation incident thereon. In particular, the carbon nanotube may for example, in given conditions of electrical biasing, present a high electrical conductivity when it is impinged upon by electromagnetic radiation having a given wavelength and a polarization substantially parallel to the axis of the carbon nanotube itself, and a reduced electrical conductivity when it is impinged upon by electromagnetic radiation having a given wavelength and a polarization substantially orthogonal to the axis of the carbon nanotube itself.

Optically controlled electrical-switch device based upon carbon nanotubes and electrical-switch system using the switch device

A galvanic optocoupler of the type monolithically integrated on a silicon substrate and having at least one luminous source and a photodetector interfaced by means of a galvanic insulation layer. The photodetector can be a phototransistor realized in the silicon substrate, and the galvanic insulation layer () is a passivation layer of this phototransistor. The luminous source, above the galvanic insulation layer includes an integrated LED having a first and second polysilicon layer with function of cathode and anode, respectively, these first and second layers enclosing at least one light emitter layer, in particular a silicon oxide layer enriched with silicon (SRO). An integration process of a galvanic optocoupler thus made, in particular in BCD3s technology is provided.

Galvanic optocoupler and method of making

The present invention relates to a new light emitters that exploit the use of semiconducting single walled carbon nanotubes (SWNTs). Experimental evidences are given on how it is possible, within the standard silicon technology, to devise light emitting diodes (LEDs) emitting in the infrared IR where light emission results from a radiative recombination of electron and holes on semiconducting single walled carbon nanotubes (SWNTs-LED). We will also show how it is possible to implement these SWNTs-LED in order to build up a laser source based on the emission properties of SWNTs. A description of the manufacturing process of such devices is also given.

Method of forming light emitting devices comprising semiconducting single walled carbon nanotubes

A device for emitting optical radiation is integrated on a substrate of semiconductor material. The device includes an active layer having a main area for generating radiation, and first and second electro-conductive layers having an electric signal that generates an electric field to which an exciting current is associated. In the device, a dielectric region is formed between the first and second layers to space peripheral portions of the first and second layers so that the electric field in the main area is higher than the electric field between the peripheral portions, thereby facilitating generation of the exciting current in the main area. A method of manufacturing is also disclosed.

Optical radiation emitting device and method of manufacturing same

The present disclosure relates to an architecture of a device with galvanic optocoupling of the type having at least one optical source and one optical detector, optically connected by means of an insulation layer that functions to transmission optical signals, and having at least one input terminal and one output terminal, the optical source and the optical detector connected to a respective first and second voltage reference. The optical source is realized by a structure integrated directly above the insulation layer in correspondence with the optical detector, the architecture thus completely realized inside a single integration island.

Device having galvanic optocoupling

Growing community of inventors

Tremestieri Etneo, Italy

Salvatore Coffa