Nexcis

Salvador Jaime

Hariklia Deligianni

Lubomyr Taras Romankiw

Qiang Huang

Shafaat Ahmed

Raman Vaidyanathan

Philippe De Gasquet

Cedric Broussillou

Cédric Broussillou

The invention relates to manufacturing a I-III-VI compound in the form of a thin film for use in photovoltaics, including the steps of: a) electrodepositing a thin-film structure, consisting of I and/or III elements, onto the surface of an electrode that forms a substrate (SUB); and b) incorporating at least one VI element into the structure so as to obtain the I-III-VI compound. According to the invention, the electrodeposition step comprises checking that the uniformity of the thickness of the thin film varies by no more than 3% over the entire surface of the substrate receiving the deposition.

Checking the stoichiometry of I-III-VI layers for use in photovoltaic using improved electrolysis conditions

The invention relates to the production of a thin film having photovoltaic properties, containing a I-III-VI-type alloy and deposited by electrolysis, including the following steps: (a) successive deposits of layers of metallic elements I and III; and (b) thermal post-treatment with the addition of element VI. In particular, step (a) comprises the following operations: (a1) depositing a multi-layer structure comprising at least two layers of element I and two layers of element III, deposited in an alternate manner, and (a2) annealing said structure before adding element VI in order to obtain a I-III alloy.

Production of thin films having photovoltaic properties, comprising depositing an alternate I/III or III/I multi-layer structure and annealing said structure

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Rousset, France

Salvador Jaime