Redlen Technologies, Inc.

Salah Awadalla

Henry Chen

Pinghe Lu

Pramodha Marthandam

Glenn Bindley

Serguei Roupassov

Ray Brougham

Andrew MacDonald

A radiation detector includes a semiconductor substrate having opposing front and rear surfaces, a cathode electrode located on the front surface of the semiconductor substrate configured so as to receive radiation, and a plurality of anode electrodes formed on the rear surface of said semiconductor substrate. A work function of the cathode electrode material contacting the front surface of the semiconductor substrate is lower than a work function of the anode electrode material contacting the rear surface of the semiconductor substrate.

Imaging devices with solid-state radiation detector with improved sensitivity

Solid-state radiation detector with improved sensitivity

A method of making a semiconductor radiation detector includes the steps of providing a semiconductor substrate having front and rear major opposing surfaces, forming a solder mask layer over the rear major surface, patterning the solder mask layer into a plurality of pixel separation regions, and after the step of patterning the solder mask layer, forming anode pixels over the rear major surface. Each anode pixel is formed between adjacent pixel-separation regions and a cathode electrode is located over the front major surface of the substrate. The solder mask can be used as a permanent photoresist in developing patterned electrodes on CdZnTe/CdTe devices as well as a permanent reliability protection coating. The method is very robust and ensures long-term reliability, outstanding detector performance, and may be used in applications such as medical imaging and for demanding other highly spectroscopic applications.

Method of fabricating patterned CZT and CdTe devices

A method of forming a passivation layer comprises contacting at least one surface of a wide band-gap semiconductor material with a passivating agent comprising an alkali hypochloride to form the passivation layer on said at least one surface. The passivation layer may be encapsulated with a layer of encapsulation material.

Method of passivating and encapsulating CdTe and CZT segmented detectors

A method is provided for fabricating contacts on semiconductor substrates by direct lithography that results in durable adhesion of the electrodes, increased interpixel resistance and the electrodes which act as a blocking contact, thereby providing for improved energy resolution in a resultant radiation detector.

Method of making segmented contacts for radiation detectors using direct photolithography

A radiation detector includes a semiconductor substrate with opposing front and rear surfaces, where a cathode electrode is located on the front surface, a plurality of anode electrodes located on the rear surface, and an electrically conductive housing is placed in electrical contact with the cathode electrode.

Multi-functional cathode packaging design for solid-state radiation detectors

A semiconductor radiation detector is provided for improved performance of pixels at the outer region of the crystal tile. The detector includes a semiconductor single crystal substrate with two major planar opposing surfaces separated by a substrate thickness. A cathode electrode covers one of the major surfaces extending around the sides of the substrate a fraction of the substrate thickness and insulated on the side portions by an insulating encapsulant. An exemplary example is given using Cadmium Zinc Telluride semiconductor, gold electrodes, and Humiseal encapsulant, with the side portions of the cathode extending approximately 40-60 percent of the substrate thickness. The example with CZT allows use of monolithic CZT detectors in X-ray and Gamma-ray applications at high bias voltage. The shielding electrode design is demonstrated to significantly improve gamma radiation detection of outer pixels of the array, including energy resolution and photopeak counting efficiency. The detector has performance of detector leakage current density less than 6 nA/mmat a bias potential of substantially 1400V, and responsive to gamma radiation such that the energy resolution full width half maximum of more than 90% of the pixels is less than 6%.

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Victoria, Canada

Salah Awadalla