Renesas Technology Corp.

Hitachi, Ltd.

Hitachi Tohbu Semiconductor, Ltd.

Other

Murata Manufacturing Co., Ltd.

Renesas Electronics Corporation

Renesas Eastern Japan Semiconductor, Inc.

Akita Electronics Co., Ltd.

Eastern Japan Semiconductor Technologies, Inc.

Renesas Eastern Semiconductor, Inc.

Sakae Kikuchi

Osamu Kagaya

Kenji Sekine

Tetsuaki Adachi

Kiichi Yamashita

Yasuhiro Nunogawa

Eiichi Hase

Shizuo Kondo

Iwamichi Kohjiro

Yoshihiko Kobayashi

Tsutomu Ida

Yoshinori Shiokawa

Masakazu Hashizume

Kenji Sasaki

Yasunari Umemoto

Takeshi Sato

Hideo Suzuki

Tomonori Tanoue

Masateru Suwa

Keiichi Kuniya

Takashi Kitahara

Masashi Maruyama

Tsutomu Kobori

Atsushi Sasayama

Tomio Iizuka

Susumu Sato

Tomio Yasuda

Takeshi Sasaki

Toshihiko Kyogoku

Ryuichi Ikezawa

Tadashi Kodu

Kiyoharu Mochiduki

Akio Ishidu

Iwamichi Kojiro

Toshifumi Makino

A technology is provided so that RF modules used for cellular phones etc. can be reduced in size. Over a wiring board constituting an RF module, there are provided a first semiconductor chip in which an amplifier circuit is formed and a second semiconductor chip in which a control circuit for controlling the amplifier circuit is formed. A bonding pad over the second semiconductor chip is connected with a bonding pad over the first semiconductor chip directly by a wire without using a relay pad. In this regard, the bonding pad formed over the first semiconductor chip is not square but rectangular (oblong).

RF module including control IC without the aid of a relay pad

In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

Semiconductor device

The variation of the parasitic inductance generated at the output terminal of a transistor in the final stage of a multistage amplifier unit is reduced. One side of the semiconductor chip that includes the final stage transistor is put in contact with the inner wall of a square recess formed in a wiring substrate. The semiconductor chip is positioned and fixed accurately at the bottom of the recess, whereby the drain wire of the transistor is fixed. Then, a chip edge at which the drain electrode is disposed on top of the chip is put in contact with the inner wall of the recess, which is closer to the drain bonding pad. A metallized layer is formed of the same size as that of the chip at the bottom of the recess and a fusion bonding material is supplied on the metallized layer.

Semiconductor device, its manufacturing method, and radio communication device

A high frequency power amplifying device has two amplifying lines. Each amplifying line has a configuration in which a plurality of amplifying stages are connected in cascade having two source voltage terminals, of which one is connected to the first amplifying stage of one amplifying line and to the remaining amplifying stages of the other amplifying line, and the other, to the first amplifying stage of the latter amplifying line and to the remaining amplifying stages of the former amplifying line. An air core coil with a low D.C. resistance, formed by spirally winding a copper wire of about 0.1 mm in diameter, is connected in series between the final amplifying stage of each amplifying line and the source voltage terminal.

Semiconductor device, and method and apparatus for manufacturing semiconductor device

Semiconductor device, its manufacturing method, and ratio communication device

In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is placed at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

A semiconductor device is disclosed wherein a semiconductor pellet is attached on a heat sink of a flange, leads are connected to corresponding electrodes of the semiconductor pellet directly or through wires, the semiconductor pellet and portions of the leads are sealed by resin mold on the flange and top outer periphery of the heat sink is formed with a projection to prevent peel-off of the resin mold and cracking of the resin mold which would otherwise occur due to difference between coefficients of thermal expansion of the flange and the resin mold.

Resin sealed semiconductor device

A semiconductor device comprising a semiconductor substrate and a supporting electrode disposed at least on one surface of the semiconductor substrate, in which the supporting electrode has such a composite structure that fibers having a coefficient of thermal expansion substantially equal to or lower than that of the semiconductor substrate are embedded in a matrix of a metal having electric and heat conductivities higher than those of the fibers. This supporting electrode has a satisfactorily high heat conductivity and the coefficient of thermal expansion thereof is freely adjustable.

Semiconductor device having supporting electrode composite structure of

Growing community of inventors

Takasaki, Japan

Sakae Kikuchi