Massachusetts Institute of Technology

Sajan Saini

Lionel Cooper Kimerling

Dong Pan

Jurgen Michel

Jifeng Liu

Daniel Knight Sparacin

Luca Dal Negro

Wojciech P Giziewicz

A laser structure includes at least one active layer having doped Ge so as to produce light emissions at approximately 1550 nm from the direct band gap of Ge. A first confinement structure is positioned on a top region of the at least one active layer. A second confinement structure is positioned on a bottom region the at least one active layer.

Method and structure of germanium laser on silicon

An optical waveguide structure includes an air-via region that receives an optical signal from an optical source. A photonic crystal cladding region is formed on the surface of the air-via region. The photonic crystal cladding region confines the optical signal within the air-via region and propagates the optical signal along the axial direction while ensuring near complete transmission of the optical signal.

Partial confinement photonic crystal waveguides

A microphotonic light source includes an optical pump and a plurality of waveguides that distribute optical pump power of the optical pump. At least one Erbium-doped laser ring is coupled to at least one of the waveguides so as to match the resonance condition of the optical pump.

Planar multiwavelength optical power supply on a silicon platform

Growing community of inventors

Cambridge, MA, United States of America

Sajan Saini