Samsung Electronics Co., Ltd.

Sandisk Technologies Inc.

Sajal Mittal

Abhishek Ghosh

Sneha Bhatia

Hareharan Nagarajan

Parvinder Kumar Rana

Vinayak Ashok Ghatawade

Rahul Kataria

Rajeela Deshpande

Venkatesh Ramachandra

Vinod Sharma

Anil Pai

Aroma Bhat

Abdur Rakheeb

Nandish Uppal Raravi

Utkarsh Garg

Jaskaran Singh Bhatia

Nikhila C M

Systems and methods disclosed herein provide for selectively activating or deactivating one or more memory of a memory array, such that related data path logic of deactivated memory dies neither detects nor processes control signals or data signals for data operations. Examples of the systems and methods provided herein operate to detect a first enable signal at a memory die and detect a first data signal on input/output (I/O) receivers of the memory die. Responsive to detecting at least the first enable signal, a bit value encoded in the first data signal is latched to obtain a first bit pattern. A second bit pattern is obtained, and, based on a comparison of the first bit pattern to the second bit pattern, the I/O receivers of the memory die are activated.

Methods and systems for selectively enabling/disabling memory dies

A data path architecture and corresponding method of operation are disclosed that permit a first-in-first out (FIFO) buffer to immediately flush data—including potentially invalid initial byte(s)—upon receipt of a high-speed clock signal, and according to which, a delay difference between a data path clock signal and a high-speed clock signal is compensated for at a controller side by, for example, adjusting RE latency to discard/ignore the initially invalid bytes rather than by modifying FIFO depth or varying a number of delay stages in the high-speed clock signal path in order to satisfy the FIFO depth. Because FIFO depth is not used to absorb the clock signal delay difference, there is no need to modify the architecture (e.g., change the depth of a FIFO) to accommodate variation in the clock signal delay difference across different products/product generations, thereby providing high scalability.

Free flow data path architectures

A CMOS transistor circuit including: a first block generating a first output signal of a NOR state, in response to first and second input signals; a second block including a first AND-OR gate, the second block generating a second output signal of an OR or an AND state, the second block receiving the first and second input signals and the first output signal; a third block generating a third output signal of the NOR state, in response to a third input signal and the second output signal; a fourth block including a second AND-OR gate, the fourth block generating a fourth output signal of the OR or the AND state in response to the third input signal, the second output signal and the third output signal; and a fifth block including an inverter gate, the fifth block generating a fifth output signal in response to the fourth output signal.

Three-input exclusive NOR/OR gate using a CMOS circuit

Methods and apparatus for implementing a current-mirror based level shifter circuit are provided. The current-mirror based level shifter circuit includes a current-mirror circuit, a feedback control circuit, a power down circuit and a plurality of inverter circuits. The apparatus is configured to provide a wide voltage shifting range using the current-mirror based level shifter circuit. The apparatus comprising a feedback loop with two diode connected transistors may provide a constant drivability to the node that drives the output, when a current-mirror circuit is turned-off.

Current-mirror based level shifter circuit and methods for implementing the same

A circuit comprising a non-volatile memory array, an Input/Output (IO) circuit, a decoder circuit, a control circuit, and a read/write circuit. The non-volatile memory array couples to an address decoder that identifies a location within the non-volatile memory array for a storage command. The IO circuit couples to a decoder circuit through a control bus. The decoder circuit decodes a command address and storage command from a fixed length command sequence received by the IO circuit over the data bus. The decoder circuit may include a serial-in parallel out (SIPO) circuit for decoding and parallel operation. The control circuit couples to the IO and decoder circuits and generates control signals to execute decoded storage commands. The read/write circuit couples to the non-volatile memory array and the control circuit. The read/write circuit transfers data between the non-volatile memory array and the IO circuit in response to the storage commands.

Non-volatile memory interface

A memory device includes receiving, by a memory module, a first combined signal and a second combined signal from a memory controller and decoding, by the memory module, the first combined signal and the second combined signal to obtain a first chip enable signal, a first address latch enable signal, and a first command latch enable signal. Upon decoding, the first command latch enable signal and the first address latch enable signal are received substantially simultaneously as the first chip enable signal to reduce a setup time.

Unified chip enable, address and command latch enable protocol for nand memory

Embodiments herein disclose a flip flop comprising at least one of a slave circuit and a retention circuit receiving an input from a master circuit. The output circuit receives an input (X) from at least one of the slave circuit and the retention circuit. A first node and a second node in the retention circuit receive a power supply from a global power supply through transistors, when a retention is 0 in the retention circuit, so that the slave circuit retains a current state of the Xand Xirrespective of a clock input in the slave circuit, and the output circuit receives the stored state of the retention circuit, when a local power supply is turned ON.

Flip flop circuit

Example embodiments provides a full adder integrated circuit (ADDF) for improving area and power of an integrated circuit (IC). The method includes receiving three input signals and generating three corresponding complementary output signals. Further, the method includes generating an internal signal using two complementary output signals out of the generated three corresponding complementary output signals, and one of the three input signals. Further, the method includes generating an output summation signal using a complementary output signal out of the generated three corresponding complementary output signals, the generated internal signal and a complementary internal signal of the generated internal signal. Further, the method includes generating a carry-out signal using two complementary output signal out of the generated three corresponding complementary output signals, the generated internal signal and the complementary internal signal. Example embodiments herein also provide a four input multiplexer Integrated circuit (MXT4) for reducing the area of the IC.

Area and power efficient circuits for high-density standard cell libraries

A method and a flip-flop for designing low power integrated circuits (IC's). The method includes receiving at least one of a clock signal, a data signal, and a complimentary data signal. The complimentary data signal is produced by an input data inverter present in the flip-flop. Further, the method includes generating at least one master internal signal based on the received at least one of the clock signal, the data signal, and the complimentary data signal, when the clock signal is at a low logic level. Further, the method includes generating at least one slave internal signal based on at least one of the received clock signal and the generated at least one master internal signal, when the clock signal is at a high logic level. Further, the method includes generating an output signal based on the generated at least one slave internal signal.

Low voltage tolerant ultra-low power edge triggered flip-flop for standard cell library

A method and a sense amplifier flip-flop (SAFF) for fixing setup time violations in an integrated circuit (IC) design. The SAFF includes a master latch coupled to a slave latch, wherein the master latch includes a sense amplifier and the SAFF is configured with an equal number of p-type metal oxide semiconductor (PMOS) transistors and n-type metal oxide semiconductor (NMOS) transistors to reduce block area of an integrated circuit (IC). The method includes receiving a clock signal, receiving a data signal, applying the data signal to the sense amplifier when the clock signal is at a low level, wherein a portion of the sense amplifier is responsive to the inverted clock signal, storing a value of the data signal in the slave latch when the clock signal transitions from the low level to the high level, and providing an output signal from the slave latch.

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Bengaluru, India

Sajal Mittal