Sandisk Technologies Inc.

Western Digital Technologies, Inc.

Sainath Viswasarai

Anantharaj Thalaimalai Vanaraj

Gopu S

Swaroop Kaza

Aaron Keith Olbrich

Arun Thandapani

Piyush Anil Dhotre

Dharmaraju Marenahally Krishna

Divya Prasad

Chittoor Devarajan Sunilkumar

Anantharaj Thalaimalaivanaraj

Suman Tenugu

Subin Cp

Narayan Kuddannavar

An apparatus includes control circuits configured to connect to a plurality of non-volatile memory cells. Each non-volatile memory cell is configured to store a plurality of bits of a plurality of logical pages including at least a first bit of a first logical page, a second bit of a second logical page and a third bit of a third logical page. The control circuits are configured to select a subset of the plurality of logical pages for reading, perform pre-read steps, and read a first and at least a second selected logical page of the subset without performing pre-read steps between reading the first and second selected logical pages.

Nonvolatile memory with combined reads

A non-volatile storage system comprises non-volatile memory cells arranged in physical blocks, and one or more control circuits in communication with the non-volatile memory cells. The one or more control circuits are configured to write data to a physical block of the non-volatile memory cells with a scheme to reduce read disturb if a logical block associated with the physical block has a read intensity greater than a threshold.

Scheme to reduce read disturb for high read intensive blocks in non-volatile memory

Apparatuses, systems, methods, and computer program products for enhanced erase retry of a non-volatile storage device are disclosed. An apparatus includes a non-volatile storage device and a controller. A controller includes a verification component configured to detect that an erase operation performed on an erase block of a non-volatile storage device is unsuccessful. A controller includes a parameter component configured to adjust one or more erase parameters for an erase operation. One or more erase parameters may be associated with one or more select gate drain storage cells of an erase block. A controller includes an erase component configured to retry an erase operation on an erase block with one or more adjusted erase parameters.

Enhanced erase retry of non-volatile storage device

A die includes a plurality of memory cells. The die also includes a calculation circuit configured to determine a difference between a write temperature and a read temperature in response to a read request for user data stored in the memory cells. The die further includes a notification circuit configured to signal a cross-temperature condition in response to the difference satisfying a threshold.

Throughput performance for cross temperature handling scenarios

A memory controller receives a command to perform a memory operation, the command including a data packet comprising a plurality of data divisions. In response to receiving the command, for each individual memory device, the memory controller assigns to the individual memory device a respective data division, the respective data division including a plurality of data segments, and determines a single relative memory address associated with an address specified by the received command. The memory controller assembles a sub-request comprising a single contiguous instruction portion, which includes the single relative memory address and one or more instructions to perform the memory operation, and the respective data division, the respective data division following the single contiguous instruction portion, and transmits the sub-request to every memory portion of the number of memory portions of the individual memory device.

Multi-package segmented data transfer protocol for sending sub-request to multiple memory portions of solid-state drive using a single relative memory address

Locally generating and storing RAID stripe parity with single relative memory address for storing data segments and parity in multiple non-volatile memory portions

A first memory portion of a plurality of memory portions is configured to determine a designated position of the first memory portion (in a predefined sequence of the plurality of memory portions), and to receive a sub-request conveyed to the plurality of memory portions in the first memory device. The sub-request has a single contiguous instruction portion and a plurality of data segments. The single contiguous instruction portion has a single relative memory address and a single set of one or more instructions to write the data segments. The first memory portion detects that the received sub-request includes an instruction to write data, and in response, identifies a first data segment allocated to the first memory portion, places the first data segment into a buffer of the first memory portion, and writes the buffered first data segment to a location in non-volatile memory of the first memory portion.

Growing community of inventors

Hyderbad, India

Sainath Viswasarai