University of Central Florida Research Foundation Inc

Saiful Khondaker

Lei Zhai

Qun Huo

Jianhua Zou

Hui Chen

Harish Muthuraman

Muhammad Islam

Laurene Tetard

A plasma-based processing method includes depositing a transition metal dichalcogenide (TMDC) material onto a substrate. The TMDC material is plasma treated in an oxygen containing ambient to oxidize the TMDC material to form oxidized dielectric TMDC material. The oxidized dielectric TMDC material has a higher electrical resistivity as compared an electrical resistivity of the TMDC material before the plasma treating, typically &#x3e;10times greater.

Plasma treated semiconductor dichalcogenide materials and devices therefrom

A carbon nanotube-polymer composite includes a polymer continuous phase having at least a first polymer, and a plurality of carbon nanotubes dispersed in the polymer continuous phase. The carbon nanotubes are non-functionalized nanotubes. The carbon nanotubes are between 0.05 and 40 weight % of the composite. At least 98% of the carbon nanotubes are not involved in nanotube bundles.

Polymer composites having highly dispersed carbon nanotubes

A method of forming carbon nanotube-polymer composites includes the steps of forming a mixture solution including a plurality of carbon nanotubes dispersed in a co-solvent. The co-solvent includes an organic solvent and a second solvent being a short chain fluorinated carboxylic acid having a boiling point below 150&#xb0; C. which is less oxidizing than nitric acid, and is soluble in both the organic solvent and water. The first polymer is mixed with the mixture solution to form a polymer including mixture. The co-solvent is removed from the polymer mixture to form a dispersed nanotube-polymer composite. The second solvent can be trifluoroacetic acid.

Polymer composites having highly dispersed carbon nanotubes and methods for forming same

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Saiful Khondaker