Intel Corporation

Said Rami

Hyung-Jin Lee

Telesphor Kamgaing

Georgios C Dogiamis

Henning Braunisch

Bernhard Sell

Mark Armstrong

Richard J Dischler

Kinyip Phoa

Jeff C Morriss

Saurabh Morarka

Ajay Balankutty

Guannan Liu

Qiang Yu

Surej Ravikumar

Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication. In an example, an integrated circuit structure includes a fin including silicon. A gate structure is over the fin, the gate structure having a center. A conductive source trench contact is over the fin, the conductive source trench contact having a center spaced apart from the center of the gate structure by a first distance. A conductive drain trench contact is over the fin, the conductive drain trench contact having a center spaced apart from the center of the gate structure by a second distance, the second distance greater than the first distance by a factor of three.

Non-planar integrated circuit structures having asymmetric source and drain trench contact spacing

Disclosed herein are field-effect transistors with asymmetric gate stacks. An example transistor includes a channel material and an asymmetric gate stack, provided over a portion of the channel material between source and drain (S/D) regions. The gate stack is asymmetric in that a thickness of a gate dielectric of a portion of the gate stack closer to one of the S/D regions is different from that of a portion of the gate stack closer to the other S/D region, and in that a work function (WF) material of a portion of the gate stack closer to one of the S/D regions is different from a WF material of a portion of the gate stack closer to the other S/D region. Transistors as described herein exploit asymmetry in the gate stacks to improve the transistor performance in terms of high breakdown voltage, high gain, and/or high output resistance.

Field-effect transistors with asymmetric gate stacks

Embodiments herein may relate to an interconnect that includes a transceiver, wherein the transceiver is configured to generate a single side band (SSB) signal for communication over a waveguide and a waveguide interconnect to communicate the SSB signal over the waveguide. In an example, an SSB operator is configured to generate the SSB signal and the SSB signal can be generated by use of a finite-impulse response filter. Other embodiments may be described and/or claimed.

Single side band transmission over a waveguide

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Portland, OR, United States of America

Said Rami