Texas Instruments Corporation

Said Ghneim

Lance Stanford Robertson

James David Bernstein

Jeffrey Loewecke

Jiejie Xu

Mahalingam Nandakumar

Frank Scott Johnson

Benjamin Moser

Nandu Mahalingam

A method of forming sidewall spacers for a gate in a semiconductor device includes depositing a gate oxide layer over a gate and source/drain regions, and using a thermal anneal to oxidize silicon of the substrate and silicon of the gate after formation of the deposited oxide layer. A sidewall layer is deposited over the oxide layer following the oxidation, and the sidewall layer and oxide layer are patterned to form the sidewall spacers.

Method of forming sidewall spacers to reduce formation of recesses in the substrate and increase dopant retention in a semiconductor device

The present invention provides a method for implanting charged particles in a substrate and a method for manufacturing an integrated circuit. The method for implanting charged particles in a substrate, among other steps, includes projecting a beam of charged particles () to a substrate (), the beam of charged particles () having a given beam divergence; and forming a diverged beam of charged particles () by subjecting the beam of charged particles () to an energy field (), thereby causing the beam of charged particles () to have a larger beam divergence. The method then desires implanting the diverged beam of charged particles () into the substrate ().

Divergent charged particle implantation for improved transistor symmetry

The present invention provides a method for implanting charged particles in a substrate and a method for manufacturing an integrated circuit. The method for implanting charged particles in a substrate, among other steps, includes projecting a beam of charged particles () to a substrate (), the beam of charged particles () having a given beam divergence, and forming a diverged beam of charged particles () by subjecting the beam of charged particles () to an energy field (), thereby causing the beam of charged particles () to have a larger beam divergence. The method then desires implanting the diverged beam of charged particles () into the substrate ().

The present invention provides a method for implanting ions in a substrate and a method for manufacturing an integrated circuit. The method for implanting ions in a substrate, among other steps, including placing a substrate () on an implant platen () such that a predominant axes () of the substrate () is rotated about 30 degrees to about 60 degrees or about 120 degrees to about 150 degrees offset from a radial with respect to the implant platen (), and further wherein the substrate () is not tilted. The method further includes implanting ions into the substrate (), the rotated position of the predominant axes () reducing shadowing.

Implant optimization scheme

The present invention provides a method for implanting a dopant in a substrate and a method for manufacturing a semiconductor device. The method for implanting a dopant, among other steps, including tilting a substrate () located on or over an implant platen () about an axis in a first direction with respect to an implant source () and implanting a portion of an implant dose within the substrate () tilted in the first direction. The method further includes tilting the substrate () having already been tilted in the first direction about the axis in a second opposite direction, and implanting at least a portion of the implant dose within the substrate () tilted in the second opposite direction.

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Richardson, TX, United States of America

Said Ghneim