Panasonic Corporation

Saichiro Kaneko

Takashi Saji

Hiroto Yamagiwa

Takashi Kunimatsu

In a high-voltage semiconductor switching element, in addition to a first emitter region that is necessary for switching operations, a second emitter region, which is electrically connected with the first emitter region through a detection resistor in current detection means and is electrically connected with the current detection means, is formed. No emitter electrode is formed on the second emitter region, while an emitter electrode is formed on a part of a base region that is adjacent to the second emitter region.

Semiconductor device

A semiconductor device includes a principal IGBT controllable in accordance with a gate voltage applied to a gate electrode thereof, a current detecting IGBT connected to the principal IGBT in parallel and a current detecting part including a detecting resistor capable of detecting a current passing through the current detecting IGBT. The base region of the current detecting IGBT and the emitter region of the principal IGBT are electrically connected to each other, and the emitter region of the current detecting IGBT and the emitter region of the principal IGBT are electrically connected to each other through the detecting resistor.

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Kyoto, Japan

Saichiro Kaneko