Aixtron Se

Aixtron, Inc.

Mattson Technology, Inc

Plasmasi, Inc.

Other

Sai Mantripragada

Allan B Wiesnoski

Stephen E Savas

Sooyun Joh

Carl Galewski

Rene George

Robert Guerra

Craig Ranft

Nicole Kuhl

Ying Holden

Laizhong Luo

David A Barker

Robert T LoBianco

Farzad Tabrizi

Hood Chatham

Stephen Edward Savas

A method and apparatus are provided for plasma-based processing of a substrate based on a plasma source having a first, second and third electrodes disposed above a pedestal. The second electrode is disposed between the first and third electrodes. A first gap is formed between the first electrode and the pedestal and between the third electrode and the pedestal. A second gap is formed between the first and second electrodes, and a third gap is formed between the second and third electrodes. A first radio frequency (RF) power supply is connected to the first and third electrodes and is configured to predominantly deliver power to plasmas located in the first gap. A second RF power supply is connected to the second electrode and is configured to predominantly deliver power to plasmas located in the second and third gaps. In such a configuration, the power density of the plasmas located in the first gap can be independently controlled relative to the power density of the plasmas located in the second and third gaps.

Methods for forming thin protective and optical layers on substrates

Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.

Plasma generating units for processing a substrate

Methods for plasma processing

The disclosed invention includes apparatus and methods that may be used for plasma-based deposition of thin layers of material on separate or continuous web substrates at very low temperatures with very low defect density. It achieves superior control of gas phase chemistry by controlling the sequence of introduction of gaseous components. It also has substantially independent control over the rate of chemical processes in the gas and of the amount of power and energy of ion bombardment. Such control enables high quality single and multi-layer films to be deposited cost effectively and uniformly over larger areas under very low temperature conditions.

Apparatus and method for dielectric deposition

An integrated high speed robotic mechanism is disclosed for improving transport equipment, integrating an object movement with other functionalities such as alignment or identification. The disclosed integrated robot assembly typically comprises an end effector for moving the object in and out of a chamber, a rotation chuck incorporated on the robot body to provide centering and theta alignment capability, and an optional identification subsystem for identifying the object during transport. The present invention also discloses a transfer robot system, employing a plurality of integrated robot assemblies; a transfer system where a transfer robot system can service a plurality of connected chambers such as FOUP or FOSB; a front end module (FEM); or a sorter system. Through the use of these incorporated capabilities into the moving robot, single object transfer operations can exceed 500 parts per hour.

Integrated wafer transfer mechanism

A system and method for two-sided etch of a semiconductor substrate. Reactive species are generated and flowed toward a substrate for processing. A diverter is positioned between the generation chamber and the substrate. A portion of the reactive species flows through the diverter for processing the front of the substrate. Another portion is diverted around the substrate to the backside for processing. A flow restricter is placed between the substrate and the exhaust system to increase the residence time of reactive species adjacent to the backside.

Systems and methods for two-sided etch of a semiconductor substrate

Growing community of inventors

Fremont, CA, United States of America

Sai Mantripragada